IRG4BC30W_04 [IRF]

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A); 绝缘栅双极晶体管( VCES = 600V,的Vce (上),最大值= 2.70V , @ VGE = 15V ,集成电路= 12A)
IRG4BC30W_04
型号: IRG4BC30W_04
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
绝缘栅双极晶体管( VCES = 600V,的Vce (上),最大值= 2.70V , @ VGE = 15V ,集成电路= 12A)

晶体 晶体管 栅
文件: 总8页 (文件大小:582K)
下载:  下载PDF数据表文档文件

IRG4BC30WPBF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

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21 IRF

IRG4BC30WS

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

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24 IRF

IRG4BC30W-S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

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55 IRF

IRG4BC30W-SPBF

INSULATED GATE BIPOLAR TRANSISTOR

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20 IRF

IRG4BC30W-SPBF

INSULATED GATE BIPOLAR TRANSISTOR

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21 IRF

IRG4BC30W-STRL

暂无描述

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0 IRF

IRG4BC30W-STRLPBF

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30W-STRR

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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0 IRF

IRG4BC30W-STRRPBF

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRG4BC40F

Fit Rate / Equivalent Device Hours

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27 IRF

IRG4BC40F

INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

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79 IRF

IRG4BC40FD

Fit Rate / Equivalent Device Hours

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21 IRF

IRG4BC40FPBF

Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

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46 IRF

IRG4BC40K

Fit Rate / Equivalent Device Hours

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25 IRF

IRG4BC40K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

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52 IRF