IRG4BC40WSPBF [INFINEON]
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRG4BC40WSPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 栅 |
| 文件： | 总10页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95861
IRG4BC40WS
IRG4BC40WL
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
VCES = 600V
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
V
CE(on) typ. = 2.05V
G
@VGE = 15V, IC = 20A
E
n-channel
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
D2Pak
TO-262
IRG4BC40WS IRG4BC40WL
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
40
IC @ TC = 100°C
20
A
ICM
160
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
160
VGE
± 20
160
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.77
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
0.5
Junction-to-Ambient (PCB Mounted steady-state)
Weight
2.0 (0.07)
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1
4/19/04
IRG4BC40WS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
V
V
Emitter-to-Collector Breakdown Voltage 18
3.0
18
0.44
V/°C VGE = 0V, IC = 1.0mA
IC = 20A
2.05 2.5
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.36
1.90
IC = 40A
V
See Fig.2, 5
IC = 20A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
13
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
28
S
VCE = 100 V, IC =20A
250
2.0
2500
±100
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
98 147
12 18
Charge
IC =20A
nC VCC = 400V
Qge
Qgc
td(on)
tr
See Fig.8
36 54V
Gate
-
Collector
(turn-o=n1) 5V
GE
Turn-On Delay Time
Rise Time
27
22
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
100 150
74110
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Fall
Time
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.11
0.23
Energy losses include "tail"
mJ See Fig. 9,10, 14
0.3405.4
td(on)
tr
td(off)
tf
25
23
TJ = 150°C,
IC = 20A, VCC = 480V
ns
Turn-Off Delay Time
170
VGE = 15V, RG = 10Ω
Fall
Time
124
Energy
losses
include
"tail"
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
0.85
7.5
mJ See Fig. 10,11, 14
LE
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
1900
140
35
Output Capacitance
pF
VCC = 30V
= 1.0MHz
See Fig. 7
Reverse Transfer Capacitance
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40WS/L
50
40
30
20
10
0
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
= 90°C
J
sink
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
°
T = 25 C
J
100
10
1
°
T = 150 C
°
J
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
GE
V
= 50V
CC
80µs PULSE WIDTH
5µs PULSE WIDTH
1
1.0
2.0
3.0
4.0 5.0
5
7
9 11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC40WS/L
50
3.0
2.5
2.0
1.5
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 40 A
C
40
30
20
10
0
I
I
= 20 A
= 10 A
C
C
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
DM
x Z
+ T
thJC C
J
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40WS/L
4000
3000
2000
1000
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 20A
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
4
res
0
1
10
100
0
20
40
60
80
100
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
V
V
T
= 480V
R
=10Ω
= 15V
= 480V
CC
GE
J
G
= 15V
V
GE
°
= 25
C
V
CC
I
= 20A
C
I
=
A
40
C
1
I
I
=
=
A
A
20
10
C
C
0.1
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
(Ω)
, Gate Resistance
R
G
°
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC40WS/L
1000
100
10
2.0
10Ω
= 150 C
V
T
= 20V
R
G
T
J
=
GE
J
°
= 125 oC
V
V
GE
= 480V
= 15V
CC
1.5
1.0
0.5
0.0
SAFE OPERATING AREA
10
5
15
25
35
45
1
100
1000
I
, Collector-to-emitter Current (A)
C
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC40WS/L
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching Loss
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
ts
on
off
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7
IRG4BC40WS/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE L
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
F530S
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MBL Y
LOT CODE
WE EK 02
A = AS S E MB L Y S IT E CODE
8
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IRG4BC40WS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLEC-
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB LY
LOT CODE
WE E K 19
A= ASSEMBLY SITE CODE
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9
IRG4BC40WS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/04
10
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相关型号：
IRG4BC40WSTRLPBF
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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