IRGS6B60KDTRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRGS6B60KDTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 电动机控制 栅 晶体管 |
| 文件： | 总15页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95229C
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
IC = 10A, TC=100°C
tsc > 10μs, TJ=150°C
VCE(on) typ. = 1.8V
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-220AB
TO-262
IRGSL6B60KDPbF
IRGB6B60KDPbF
IRGS6B60KDPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
ContinuousCollectorCurrent
ContinuousCollectorCurrent
Pulsed Collector Current
600
V
IC @ TC = 25°C
18
IC @ TC = 100°C
10
ICM
26
ILM
Clamped Inductive Load Current
DiodeContinuousForwardCurrent
DiodeContinuousForwardCurrent
Diode Maximum Forward Current
Gate-to-Emitter Voltage
26
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
18
10
26
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
90
W
PD @ TC = 100°C Maximum Power Dissipation
36
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
1.4
Units
°C/W
g
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
4.4
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
62
–––
40
1.44
–––
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1
01/07/13
IRGB/S/SL6B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Collector-to-Emitter Breakdown Voltage 600 ––– –––
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
VGE(th)
V
VGE = 0V, IC = 500μA
5, 6,7
9,10,11
9,10,11
12
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
––– 2.20 2.50
3.5 4.5 5.5
V
V
IC = 5.0A, VGE = 15V
C = 5.0A,VGE = 15V,
VCE = VGE, IC = 250μA
I
TJ = 150°C
Gate Threshold Voltage
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 3.0 –––
––– 1.0 150
––– 200 500
––– 1.25 1.45
––– 1.20 1.40
S
VCE = 50V, IC = 5.0A, PW=80μs
ICES
Zero Gate Voltage Collector Current
μA
VGE = 0V, VCE = 600V
V
GE = 0V, VCE = 600V, TJ = 150°C
IC = 5.0A
C = 5.0A
VGE = ±20V
VFM
IGES
Diode Forward Voltage Drop
8
V
I
TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 18.2 –––
IC = 5.0A
––– 1.9 –––
––– 9.2 –––
––– 110 210
––– 135 245
––– 245 455
nC VCC = 400V
VGE = 15V
CT1
CT4
μJ
IC = 5.0A, VCC = 400V
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 25°C
CT4
––– 25
––– 17
34
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
Ls = 150nH, TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 215 230
––– 13.2 22
––– 150 260
––– 190 300
––– 340 560
ns
CT4
13,15
WF1WF2
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
IC = 5.0A, VCC = 400V
μJ
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 150°C
14, 16
CT4
––– 28
––– 17
37
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 240 255
––– 18 27
ns
Ls = 150nH, TJ = 150°C
WF1
WF2
Cies
Coes
Cres
Input Capacitance
––– 290 –––
––– 34 –––
––– 10 –––
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
f = 1.0MHz
4
TJ = 150°C, IC = 26A, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
FULL SQUARE
R
G = 100Ω CT2
VCC = 500V, VGE = +15V to 0V,
CT3
μs
TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
TJ = 150°C
10 ––– –––
––– 90 175
WF4
17,18,19
Erec
trr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
μJ
ns
A
20, 21
––– 70
80
14
VCC = 400V, IF = 5.0A, L = 1.4mH
VGE = 15V,RG = 100Ω, Ls = 150nH
CT4,WF3
Irr
Diode Peak Reverse Recovery Current ––– 10
Note: to are on page 15
2
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IRGB/S/SL6B60KDPbF
100
90
80
70
60
50
40
30
20
10
0
20
15
10
5
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10
1
10 μs
100 μs
DC
1ms
0.1
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGB/S/SL6B60KDPbF
20
20
18
16
14
12
10
8
18
16
14
12
10
8
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
20
18
16
14
12
10
8
30
V
= 18V
GE
-40°C
25°C
150°C
25
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
6
4
2
0
0
0
1
2
3
4
5
6
0.0
0.5
1.0
(V)
1.5
2.0
V
(V)
V
CE
F
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80μs
4
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IRGB/S/SL6B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 3.0A
= 5.0A
= 10A
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
T
T
= 25°C
J
J
= 150°C
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
6
T
= 150°C
4
J
2
T
= 25°C
15
J
0
0
5
10
15
20
0
5
10
20
V
(V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
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5
IRGB/S/SL6B60KDPbF
700
1000
100
10
600
td
OFF
500
400
300
200
100
0
E
ON
t
F
E
td
OFF
ON
R
t
1
0
5
10
(A)
15
20
0
5
10
15
20
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
250
200
150
100
50
1000
100
10
td
OFF
E
OFF
td
E
ON
ON
t
R
t
F
1
0
0
50
100
(
150
200
0
50
100
(
150
200
R
)
R
)
Ω
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
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IRGB/S/SL6B60KDPbF
20
25
20
15
10
5
R
R
22
Ω
G =
16
12
8
47
Ω
G =
G =
G =
R
R
100
150
Ω
Ω
4
0
0
0
50
100
150
200
0
5
10
15
20
R
(
I
(A)
Ω)
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 5.0A
TJ = 150°C
1200
20
16
12
8
22Ω
1000
800
600
400
200
0
10A
47
Ω
100
Ω
5.0A
3.0A
150
Ω
4
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
F
di /dt (A/μs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 5.0A; TJ = 150°C
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7
IRGB/S/SL6B60KDPbF
300
22
Ω
250
200
150
100
50
47
Ω
100
150
Ω
Ω
0
5
10
15
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
1000
100
10
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
0
1
0
5
10
15
20
1
10
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600μH
Fig. 22- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
8
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IRGB/S/SL6B60KDPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
τ
Cτ
0.708
0.447
0.219
0.00022
0.00089
0.01037
0.1
J τJ
τ
τ
1τ1
τ
2 τ2
3τ3
0.01
0.02
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
0.01
0.02
0.1
Cτ
1.194
2.424
0.753
0.000172
0.001517
0.080325
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGB/S/SL6B60KDPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGB/S/SL6B60KDPbF
500
400
300
200
100
0
25
20
15
10
5
450
400
350
300
250
200
150
100
50
9
8
7
6
5
4
3
2
1
0
-1
90% ICE
TEST CURRENT
90% test current
tf
5% VCE
5% ICE
10% test current
5% VCE
tr
0
0
Eon Loss
Eoff Loss
-50
-100
-5
-0.20
0.30
time(μs)
0.80
16.00
16.10
16.20
16.30
16.40
time (μs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
50
0
8
500
50
40
30
20
10
0
6
QRR
tRR
-50
4
400
300
200
100
0
VCE
-100
-150
-200
-250
-300
-350
-400
-450
2
ICE
0
-2
-4
-6
-8
-10
-12
Peak
IRR
10%
Peak
IRR
-5.00
0.00
5.00
time (μS)
10.00
15.00
-0.06
0.04
0.14
0.24
time (μS)
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGB/S/SL6B60KDPbF
TO-220ABPackageOutline
Dimensions are shown in millimeters (inches)
TO-220ABPartMarkingInformation
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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IRGB/S/SL6B60KDPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
AS SEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
RECTIFIER
LOGO
F530S
DAT E CODE
YEAR 0 = 2000
WE E K 02
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DE S I GNAT ES L E AD-F R E E
PRODUCT (OPT IONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WE EK 02
A = AS S E MBL Y S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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13
IRGB/S/SL6B60KDPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
WE E K 19
Note: "P" in assemblyline
pos i tion i ndi cates "L ead-F ree"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB L Y
LOT CODE
WE E K 19
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
14
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IRGB/S/SL6B60KDPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 100Ω.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:101N. Sepulveda, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2013
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15
相关型号：
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3
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IRGS6B60KTRRPBF
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
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Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB
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