IRHF57Z30 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39); 抗辐射功率MOSFET直通孔（ TO- 39 ）
| 型号： | IRHF57Z30 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD - 93793E
IRHF57Z30
JANSR2N7491T2
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL5-PRF-19500/701
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHF57Z30
IRHF53Z30
IRHF54Z30
100K Rads (Si) 0.045Ω 12A* JANSR2N7491T2
300K Rads (Si) 0.045Ω 12A* JANSF2N7491T2
500K Rads (Si) 0.045Ω 12A* JANSG2N7491T2
IRHF58Z30 1000K Rads (Si) 0.056Ω 12A* JANSH2N7491T2
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Electrically Isolated
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
12*
10
48
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.2
V
±20
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
520
mJ
A
AS
I
12
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
3.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/25/06
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
30
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.03
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.045
Ω
V = 12V, I = 10A
GS D
Ã
DS(on)
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
12
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
≥ 15V, I
= 10A Ã
DS
I
10
25
V
= 24V ,V =0V
DS GS
DSS
µA
—
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
65
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 12A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
20
V
= 15V
DS
10
t
t
t
t
25
V
= 15V, I = 12A
DD D
V =12V, R = 7.5Ω
GS
100
35
G
ns
d(off)
f
30
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
2055
936
35
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
12*
48
S
SM
A
V
1.5
92
V
T = 25°C, I = 12A, V
= 0V Ã
j
SD
S
GS
t
Reverse Recovery Time
ns
T = 25°C, I = 12A, di/dt ≤100A/µs
j
rr
F
Q
Reverse Recovery Charge
194
nC
V
≤ 25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
5.0
175
thJC
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF57Z30, JANSR2N7491T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
30
2.0
—
—
—
—
—
4.0
30
1.5
—
—
4.0
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
-100
25
V
GS
V
GS
= 20V
GSS
nA
—
= -20 V
GSS
I
—
µA
V
V
= 24V, V =0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Ã
0.024
—
0.03
Ω
=12V, I =10A
D
GS
GS
R
DS(on)
Ã
—
0.045
—
0.056
Ω
V
=12V, I =10A
D
V
SD
Ã
—
1.5
—
1.5
V
V
= 0V, I =12A
GS S
1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2)
2. Part number IRHF58Z30 (JANSH2N7491T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
(MeV)
261
285
344
Range
(MeV/(mg/cm2))
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
28
37
60
40
37
33
30
30
25
30
30
25
30
30
20
25
23
15
15
15
8
35
30
25
20
15
10
5
Cu
Br
I
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
12A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=12V
GS
1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHF57Z30, JANSR2N7491T2
20
16
12
8
3500
I
D
= 12A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
= 24V
= 15V
DS
DS
C
= C + C
iss
gs
gd ,
C
= C
3000
2500
2000
1500
1000
500
rss
gd
C
= C + C
oss
ds
C
gd
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
10
0
0
1
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
°
T = 25 C
J
BY R (on)
DS
100µs
1ms
°
T = 150 C
J
10
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
2.0
1
0.1
0.4
0.8
1.2
1.6
2.4
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHF57Z30, JANSR2N7491T2
Pre-Irradiation
RD
16
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
12
8
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
DM
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57Z30, JANSR2N7491T2
1500
1250
1000
750
500
250
0
I
D
TOP
5.4A
9.6A
BOTTOM 12A
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHF57Z30, JANSR2N7491T2
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á
V
= 20V, starting T = 25°C, L= 7.2mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 12A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 12A, di/dt ≤ 135A/µs,
DS
= 0 during
SD
DD
24 volt V
applied and V
GS
V
≤ 30V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2-GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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