IRHLUB770Z4_10 [INFINEON]
RADIATION HARDENEDLOGIC LEVEL POWER MOSFETSURFACE MOUNT (UB); 辐射HARDENEDLOGIC级电源MOSFETSURFACE MOUNT （ UB ）
| 型号： | IRHLUB770Z4_10 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENEDLOGIC LEVEL POWER MOSFETSURFACE MOUNT (UB) |
| 文件： | 总11页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95813G
IRHLUB770Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
JANSR2N7616UB
60V, N-CHANNEL
REF: MIL-PRF-19500/744
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHLUB770Z4 100K Rads (Si)
0.68Ω 0.8A JANSR2N7616UB
IRHLUB730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UB
UB
Refer to Page 11 for 3 Additional Part Numbers -
IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4
(SHIELDED METAL LID)
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
Light Weight
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
Complimentary P-Channel Available -
IRHLUB7970Z4, IRHLUBN7970Z4
IRHLUBC7970Z4 & IRHLUBCN7970Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
0.8
D
D
GS
GS
C
A
I
= 4.5V, T = 100°C Continuous Drain Current
0.5
3.2
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
DM
@ T = 25°C
P
0.6
W
W/°C
V
D
C
0.005
±10
V
GS
E
26.6
0.8
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
0.06
4.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
°C
T
Storage Temperature Range
Lead Temperature
STG
300 (for 5s)
43 (Typical)
Weight
mg
For footnotes refer to the last page
www.irf.com
1
03/15/10
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
V
V = 0V, I = 250µA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.07
—
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
Static Drain-to-Source On-State
Resistance
—
—
0.68
Ω
V = 4.5V, I = 0.5A
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
1.0
—
0.23
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= 10V, I
= 0.5A Ã
DS
I
Zero Gate Voltage Drain Current
V
= 48V ,V =0V
DSS
DS GS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
t
t
t
t
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.4
100
-100
3.6
1.5
1.8
8.0
24
30
13
—
V
= 10V
= -10V
GSS
GSS
GS
nA
V
GS
V
= 4.5V, I = 0.8A
g
gs
gd
d(on)
r
GS D
nC
V
= 30V
DS
V
= 30V, I = 0.8A,
D
= 5.0V, R = 24Ω
DD
GS
V
G
ns
d(off)
f
L
+ L
Measured from the center of
S
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
166
42
3.5
—
—
—
V
= 0V, V
= 25V
f = 100KHz
GS
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
g
Gate Resistance
14
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
78
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 0.8A, V
= 0V
j
S
GS
T = 25°C, I = 0.8A, di/dt ≤ 100A/µs
j
F
Q
75
V
DD
≤ 25V
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
200
°C/W
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
IRHLUB770Z4, JANSR2N7616UB
Radiation Characteristics
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ꢀ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
= 0V, I = 250µA
GS D
DSS
V
V
V
GS
= V , I = 250µA
GS(th)
DS
D
I
I
V
GS
= 10V
GSS
GSS
nA
µA
V
= -10V
GS
I
V
= 48V, V = 0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-39)
—
0.55
Ω
V
GS
= 4.5V, I = 0.5A
D
R
Static Drain-to-Source On-state
Resistance (UB)
DS(on)
—
—
0.68
1.2
Ω
V
= 4.5V, I = 0.5A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 0.8A
GS
D
SD
1. Part Numbers IRHLUB770Z4, IRHLUB730Z4 and additional part numbers listed on page 11.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-2V
@VGS=
-4V
@VGS=
-5V
@VGS=
-6V
@VGS=
-7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
60
60
60
60
60
60
60
60
60
60
60
40
60
30
-
35
-
-
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
VGS
-4
-5
-6
-7
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
10
10
VGS
10V
4.5V
3.5V
3.0V
2.75V
2.5V
VGS
10V
4.5V
3.5V
3.0V
2.75V
2.5V
TOP
TOP
1
2.25V
2.25V
BOTTOM 2.0V
BOTTOM 2.0V
1
0.1
2.0V
2.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= 0.8A
D
T
= 150°C
J
1
0.1
T
= 25°C
J
V
= 25V
DS
V
= 4.5V
GS
60µs PULSE WIDTH
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
I
= 0.8A
D
T
= 150°C
J
T
T
= 150°C
= 25°C
J
T = 25°C
J
J
Vgs = 4.5V
2.5 3.0
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1.0
1.5
2.0
3.5
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
75
70
65
60
55
3.0
I
= 1.0mA
D
2.5
2.0
1.5
1.0
0.5
0.0
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T , Temperature ( °C )
T
J
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
www.irf.com
5
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
250
12
10
8
V
= 0V,
f = 1MHz
gd , ds
I = 0.8A
D
GS
V
V
V
= 48V
= 30V
DS
= 12V
DS
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds
200
150
100
50
oss
gd
C
iss
6
C
oss
4
2
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
10
100
0
1
2
4
5
6
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1.0
10
0.8
0.6
0.4
0.2
0.0
T
= 150°C
= 25°C
T
J
J
1
V
= 0V
GS
0.1
25
50
75
100
125
°
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T , Case Temperature ( C)
C
V
, Source-to-Drain Voltage (V)
SD
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-Drain Diode
CaseTemperature
ForwardVoltage
6
www.irf.com
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
60
50
40
30
20
10
0
10
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
DS
TOP
0.4A
0.5A
BOTTOM 0.8A
1
0.1
100µs
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
DS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
t
1
0.02
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.01
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
7
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2V
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
4.5V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
www.irf.com
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
Case Outline and Dimensions — UB (Shielded Metal Lid Connected to 4th Pad)
0.30 R REF.
[.012 R REF.]
3.25 [.128]
2.92 [.115]
0.61 [.024]
0.41 [.016]
3X
0.96 [.038]
0.56 [.022]
3X
4
3
2.74 [.108]
2.41 [.095]
2
1
0.55 R MIN.
[.022 R MIN.]
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.42 [.056]
1.17 [.046]
2.01 [.079]
1.81 [.071]
ME T AL LID
NOT ES :
1. DIMENSIONING&TOLERANCINGPER ASME Y14.5M-1994
2. CONTROLLINGDIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4
4. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS.
5. PAD ASSIGNMENTS: 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = SHIELDING CONNECTED TO THE LID.
Case Outline and Dimensions — UBN (Isolated Metal Lid, No 4th Pad)
3.25 [.128]
0.61 [.024]
3X
2.92 [.115]
0.41 [.016]
0.96 [.038]
0.56 [.022]
3X
3
2.74 [.108]
2.41 [.095]
2
1
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.42 [.056]
1.17 [.046]
2.01 [.079]
1.81 [.071]
ME T AL LID
NOTES:
1. DIMENS IONING & T OLERANCINGPER AS ME Y14.5M-1994
2. CONTROLLINGDIMENSION: INCH.
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ].
4
4. HATCHED AREAS ON PACKAGE DENOT E MET ALIZATION AREAS .
5. PAD ASSIGNMENTS: 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = ISOLATED METAL LID.
www.irf.com
9
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
Case Outline and Dimensions—UBC (Shielded Ceramic Lid Connected to 4th Pad)
0.30 R REF.
[.012 R REF.]
3.25 [.128]
2.92 [.115]
0.61 [.024]
0.41 [.016]
3X
0.96 [.038]
0.56 [.022]
3X
4
3
2.74 [.108]
2.41 [.095]
2
1
0.55 R MIN.
[.022 R MIN.]
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.75 [.069]
1.40 [.055]
2.01 [.079]
1.81 [.071]
CE R AMIC L ID
NOTES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994
2. CONTROLLING DIMENS ION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4
4. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS.
5. PAD ASSIGNMENTS: 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = SHIELDINGCONNECTED TOTHE LID.
Case Outline and Dimensions — UBCN (Isolated Ceramic Lid, No 4th Pad)
3.25 [.128]
0.61 [.024]
3X
2.92 [.115]
0.41 [.016]
0.96 [.038]
0.56 [.022]
3X
3
2.74 [.108]
2.41 [.095]
2
1
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.75 [.069]
1.40 [.055]
2.01 [.079]
1.81 [.071]
CERAMIC LID
NOTES:
1. DIMENS IONING& TOLERANCING PER AS ME Y14.5M-1994
2. CONT ROLLING DIMENS ION: INCH.
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ].
4
4. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS.
5. PAD ASSIGNMENTS: 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = ISOLATED CERAMICLID.
10
www.irf.com
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
Footnotes:
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ꢀ Total Dose Irradiation with V Bias.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
V
= 25V, starting T = 25°C, L= 83 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 0.8A, V
= 10V
L
GS
Total Dose Irradiation with V
Bias.
I
V
≤ 0.8A, di/dt ≤ 130A/µs,
DS
= 0 during
SD
DD
48 volt V
applied and V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Additional Product Summaries (continued from page 1 and 3)
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
UBN
IRHLUBN770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UBN
IRHLUBN730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UBN
(ISOLATEDMETALLID)
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
UBC
IRHLUBC770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UBC
IRHLUBC730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UBC
(SHIELDED CERAMIC LID)
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
UBCN
(ISOLATEDCERAMICLID)
IRHLUBCN770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UBCN
IRHLUBCN730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UBCN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2010
www.irf.com
11
相关型号：
IRHLUB7970Z4SCS
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, QIRL
INFINEON
IRHLUBC770Z4
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4
INFINEON
IRHLUBC7930Z4
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4
INFINEON
IRHLUBC7970Z4
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4
INFINEON
IRHLUBCN730Z4
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBCN-4
INFINEON
IRHLUBCN770Z4
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBCN-4
INFINEON
IRHLUBN730Z4
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBN-4
INFINEON
©2020 ICPDF网 联系我们和版权申明