IRHLUC7630Z4 [IRF]

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT;
IRHLUC7630Z4
型号: IRHLUC7630Z4
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

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文件: 总16页 (文件大小:309K)
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IRHLUC7670Z4

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

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1 IRF

IRHLUC7670Z4

Simple Drive Requirements

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0 IRF

IRHLUC7670Z4_15

Simple Drive Requirements

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0 IRF

IRHLUC770Z4

Simple Drive Requirements

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1 IRF

IRHLUC770Z4_15

Simple Drive Requirements

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0 IRF

IRHLUC7970Z4

Simple Drive Requirements

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1 IRF

IRHLUC7970Z4_15

Simple Drive Requirements

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0 IRF

IRHLYS73034CM

Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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0 INFINEON

IRHLYS73034CM

Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHLYS77034CM

RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA

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30 IRF

IRHLYS77034CM

Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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1 IRF

IRHLYS77034CMS

Power Field-Effect Transistor,

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0 INFINEON

IRHLYS793034CM

Power Field-Effect Transistor, 20A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHLYS793034CM

Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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0 INFINEON

IRHLYS793034CMS

Power Field-Effect Transistor,

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0 INFINEON