IRHM58064 [IRF]

RADIATION HARDENED POWER MOSFET; 抗辐射功率MOSFET

IRHM58064


型号：	IRHM58064
厂家：	INTERNATIONAL RECTIFIER
描述：	RADIATION HARDENED POWER MOSFET 抗辐射功率MOSFET 晶体晶体管开关脉冲局域网
文件：	总8页 (文件大小：173K)
下载：	下载PDF数据表文档文件

IRHM58064PBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHM58064U

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRHM58064UPBF

暂无描述

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0 IRF

IRHM58160

RADIATION HARDENED POWER MOSFET THRU-HOLE

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32 IRF

IRHM58260

RADIATION HARDENED POWER MOSFET THRU-HOLE

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11 IRF

IRHM58260

RADIATION HARDENED POWER MOSFET THRU-HOLE

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15 IRF

IRHM58260

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

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0 INFINEON

IRHM58260D

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 INFINEON

IRHM58260DPBF

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 INFINEON

IRHM58260PBF

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

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0 INFINEON

IRHM58Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA

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22 ETC

IRHM58Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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13 IRF

IRHM58Z60SCS

Power Field-Effect Transistor,

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0 INFINEON

IRHM7054

60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

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28 ETC

IRHM7054

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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21 IRF

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