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IRHM8130UPBF [IRF]

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;

IRHM8130UPBF


元器件型号：	IRHM8130UPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN 晶体晶体管功率场效应晶体管
PDF文件：	总12页 (文件大小：487K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHM8130UPBF参数

IRHM8150

RADIATION HARDENED POWER MOSFET THRU-HOLE

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16 IRF

IRHM8150

RADIATION HARDENED POWER MOSFET THRU-HOLE

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14 IRF

IRHM8150D

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR

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6 ETC

IRHM8150D

Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8150U

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR

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5 ETC

IRHM8150U

Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8150UPBF

Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8150UPBF

Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8160

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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10 IRF

IRHM8160

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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11 IRF

IRHM8160D

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR

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7 ETC

IRHM8160D

Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8160U

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR

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3 ETC

IRHM8160UPBF

Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM8230

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254AA

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15 ETC

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