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元器件品牌
IRHM9150
[IRF]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔（ TO- 254AA ）
元器件型号：
IRHM9150
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
抗辐射功率MOSFET直通孔（ TO- 254AA ）
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：129K)
下载文档：
下载PDF数据表文档文件
型号参数：IRHM9150参数
查看货源
IRHM9150D
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR
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5
ETC
IRHM9150SCS
Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
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0
IRF
IRHM9150U
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR
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10
ETC
IRHM9150UPBF
暂无描述
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156
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0
IRF
IRHM9160
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
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48
IRF
IRHM9230
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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22
IRF
IRHM9230U
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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156
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0
INFINEON
IRHM9250
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
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18
IRF
IRHM9250
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Warning
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156
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39
IRF
IRHM9250DPBF
暂无描述
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156
-
0
IRF
IRHM9250SCSPBF
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Warning
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156
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0
IRF
IRHM9250U
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN
Warning
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156
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0
IRF
IRHM9260
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Warning
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156
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77
IRF
IRHM9260
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Warning
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156
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22
IRF
IRHM9260
Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Warning
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156
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3
IRF
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