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元器件品牌
IRHM93150
[IRF]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔（ TO- 254AA ）
元器件型号：
IRHM93150
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
抗辐射功率MOSFET直通孔（ TO- 254AA ）
PDF文件：
总8页 (文件大小：129K)
下载文档：
下载PDF数据表文档文件
型号参数：IRHM93150参数
查看货源
IRHM93150D
暂无描述
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0
IRF
IRHM93150PBF
暂无描述
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0
IRF
IRHM93150U
Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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156
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0
IRF
IRHM93160
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
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12
ETC
IRHM93230
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
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19
ETC
IRHM93250
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
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14
IRF
IRHM93250
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
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11
IRF
IRHM93250DPBF
暂无描述
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156
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0
IRF
IRHM93250PBF
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
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0
IRF
IRHM93250U
暂无描述
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156
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0
IRF
IRHM93260
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
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11
ETC
IRHM93260PBF
Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
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0
IRF
IRHMB53064
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
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11
IRF
IRHMB53064PBF
暂无描述
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156
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0
IRF
IRHMB53Z60
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
Warning
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9
IRF
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