IRHMB54Z60PBF [IRF]

Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN;
IRHMB54Z60PBF
型号: IRHMB54Z60PBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN

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文件: 总8页 (文件大小:172K)
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IRHMB57064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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8 IRF

IRHMB57260SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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11 IRF

IRHMB57260SEPBF

Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHMB57Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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10 IRF

IRHMB58064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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9 IRF

IRHMB58064PBF

Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHMB58Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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6 IRF

IRHMB58Z60PBF

Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN

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0 IRF

IRHMJ3250

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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30 IRF

IRHMJ4250

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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20 IRF

IRHMJ53160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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6 IRF

IRHMJ54160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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7 IRF

IRHMJ54160PBF

暂无描述

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0 IRF

IRHMJ57160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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14 IRF

IRHMJ57260SE

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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11 IRF