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IRHNJ63130PBF [IRF]

Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;

IRHNJ63130PBF


元器件型号：	IRHNJ63130PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN 开关脉冲晶体管
PDF文件：	总9页 (文件大小：187K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHNJ63130PBF参数

IRHNJ63134

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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7 IRF

IRHNJ63134PBF

暂无描述

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0 IRF

IRHNJ63230

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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2 IRF

IRHNJ63234

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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7 IRF

IRHNJ63434

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT

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0 IRF

IRHNJ63C30

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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6 IRF

IRHNJ67130

100V, N-CHANNEL

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142 IRF

IRHNJ67134

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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29 IRF

IRHNJ67134PBF

暂无描述

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0 IRF

IRHNJ67230

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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136 IRF

IRHNJ67234

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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33 IRF

IRHNJ67234SCS

Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRHNJ67434

Simple Drive Requirements

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0 IRF

IRHNJ67434_15

Simple Drive Requirements

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0 IRF

IRHNJ67C30

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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18 IRF

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