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IRHQ53110 [IRF]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL; 抗辐射功率MOSFET表面贴装（ LCC - 28 ） ， 100V ，四N沟道
IRHQ53110
元器件型号： IRHQ53110
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
抗辐射功率MOSFET表面贴装（ LCC - 28 ） ， 100V ，四N沟道

晶体 晶体管 功率场效应晶体管 开关 脉冲
PDF文件： 总8页 (文件大小：122K)
下载文档：  下载PDF数据表文档文件
型号参数：IRHQ53110参数
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IRHQ53110PBF

 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

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0 IRF

IRHQ53110SCV

 Power Field-Effect Transistor,

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0 INFINEON

IRHQ54110

 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL

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13 IRF

IRHQ54110

 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

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0 INFINEON

IRHQ563110

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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14 IRF

IRHQ563110

 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package

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13 ETC

IRHQ563110N

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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21 IRF

IRHQ563110P

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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20 IRF

IRHQ563110SCS

 Power Field-Effect Transistor,

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0 INFINEON

IRHQ567110

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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29 IRF

IRHQ567110

 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package

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16 ETC

IRHQ567110N

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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38 IRF

IRHQ567110P

 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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13 IRF

IRHQ567110PBF

 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

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1 IRF

IRHQ567110SCS

 Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28

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1 IRF
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