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IRHY9130CMPBF [IRF]

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA;

IRHY9130CMPBF


元器件型号：	IRHY9130CMPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
PDF文件：	总8页 (文件大小：116K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHY9130CMPBF参数

IRHY9130CMSCS

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 IRF

IRHY9130CMSCSPBF

暂无描述

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1 IRF

IRHY9230CM

-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package

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11 ETC

IRHY9230CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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27 IRF

IRHY93130CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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24 IRF

IRHY93130CMPBF

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 IRF

IRHY93230CM

-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package

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12 ETC

IRHY93230CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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7 IRF

IRHYB593034CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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10 IRF

IRHYB593034CMPBF

Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TAB-LESS TO-257AA, 3 PIN

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0 IRF

IRHYB593Z30CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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12 IRF

IRHYB593Z30CM

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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5 IRF

IRHYB593Z30CM

Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-257AA, 3 PIN

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0 IRF

IRHYB593Z30CMPBF

Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-257AA, 3 PIN

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0 IRF

IRHYB593Z30CMPBF

Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-257AA, 3 PIN

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0 IRF

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