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IRL510 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRL510
型号： IRL510
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件： 总6页 (文件大小：174K)
中文：  中文翻译
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相关型号：

IRL510-009

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON

IRL510-009PBF

 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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INFINEON

IRL510-018

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON

IRL510A

 Advanced Power MOSFET

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FAIRCHILD

IRL510A_NL

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

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FAIRCHILD

IRL510L

 Power MOSFET

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VISHAY

IRL510LPBF

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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INFINEON

IRL510PBF

 HEXFET POWER MOSFET

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-
INFINEON

IRL510PBF

 Power MOSFET

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-
VISHAY

IRL510S

 HEXFET POWER MOSFET

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INFINEON

IRL510S

 Power MOSFET

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-
VISHAY

IRL510SPBF

 Power MOSFET

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-
VISHAY

IRL510STRL

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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-
VISHAY

IRL510STRLPBF

 Power MOSFET

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VISHAY

IRL511

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | TO-220AB

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ETC

IRL520

 HEXFET POWER MOSFET

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-
INFINEON

IRL520

 Power MOSFET

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-
VISHAY

IRL520

 Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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SAMSUNG

IRL520-004PBF

 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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INFINEON

IRL520-005

 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON
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