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元器件品牌
IRL520N
[IRF]
HEXFET?? Power MOSFET; HEXFET®功率MOSFET
元器件型号：
IRL520N
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET?? Power MOSFET
HEXFET®功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：136K)
下载文档：
下载PDF数据表文档文件
型号参数：IRL520N参数
查看货源
IRL520N-010
Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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156
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0
INFINEON
IRL520NL
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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44
ETC
IRL520NLPBF
Logic-Level Gate Drive
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156
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28
IRF
IRL520NPBF
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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1
INFINEON
IRL520NS
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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40
ETC
IRL520NS
HEXFET Power MOSFET
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156
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76
IRF
IRL520NSL
HEXFET Power MOSFET
Warning
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156
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21
IRF
IRL520NSPBF
Logic-Level Gate Drive
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156
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37
IRF
IRL520NSTRLPBF
暂无描述
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156
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0
IRF
IRL520NSTRR
暂无描述
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0
IRF
IRL520NSTRRPBF
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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156
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0
IRF
IRL520PBF
Power MOSFET
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156
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20
VISHAY
IRL520S
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57
ETC
IRL520SPBF
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
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0
IRF
IRL520SU
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
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0
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