IRL530NSTRL [IRF]

Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, POWER, D2PAK, 3 PIN;
IRL530NSTRL
型号: IRL530NSTRL
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, POWER, D2PAK, 3 PIN

文件: 总8页 (文件大小:194K)
下载:  下载PDF数据表文档文件

IRL530NSTRLPBF

Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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1 INFINEON

IRL530NSTRR

暂无描述

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1 IRF

IRL530NSTRRPBF

暂无描述

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1 IRF

IRL530PBF

HEXFET㈢ Power MOSFET

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33 IRF

IRL530S

Power MOSFET

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30 VISHAY

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40 ETC

IRL530SPBF

暂无描述

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0 IRF

IRL530STRL

Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 IRF

IRL530STRR

Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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1 IRF

IRL530STRRPBF

Power MOSFET

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18 VISHAY

IRL531

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 13A I(D) | TO-220AB

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43 ETC

IRL531

Power Field-Effect Transistor, 13A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRL540

(166.75 k)

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144 ETC

IRL540

Power MOSFET

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85 VISHAY

IRL540

Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG