IRLI520NPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRLI520NPBF


型号：	IRLI520NPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总9页 (文件大小：1056K)
下载：	下载PDF数据表文档文件

IRLI530A

ADVANCED POWER MOSFET

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54 FAIRCHILD

IRLI530A

ADVANCED POWER MOSFET

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14 FAIRCHILD

IRLI530ATU

Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

IRLI530G

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | SOT-186

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109 ETC

IRLI530G

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )

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63 IRF

IRLI530G-002

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRLI530G-003

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-004

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-005

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-009PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-011PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-012PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-015PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-018PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI530G-024PBF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

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