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IRLI620 [IRF]

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.80ohm ，ID = 4.0A ）
IRLI620
元器件型号： IRLI620
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.80ohm ，ID = 4.0A ）
PDF文件： 总8页 (文件大小：300K)
下载文档：  下载PDF数据表文档文件
型号参数：IRLI620参数
 查看货源

IRLI620A

 ADVANCED POWER MOSFET

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29 FAIRCHILD

IRLI620ATU

 Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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0 FAIRCHILD

IRLI620G

 Power MOSFET

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25 VISHAY

IRLI620G

 Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)

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35 IRF

IRLI620G-002

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-003PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-004

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-004PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-005

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-005PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-006

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-006PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-009

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-009PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRLI620G-010PBF

 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY
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