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元器件品牌
IRLL024NQ
[IRF]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
元器件型号：
IRLL024NQ
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET
晶体 晶体管 开关 脉冲 光电二极管
PDF文件：
总10页 (文件大小：166K)
下载文档：
下载PDF数据表文档文件
型号参数：IRLL024NQ参数
查看货源
IRLL024NQPBF
暂无描述
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IRF
IRLL024NQTR
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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INFINEON
IRLL024NTR
Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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0
INFINEON
IRLL024NTRPBF
HEXFET® Power MOSFET
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47
IRF
IRLL024Z
AUTOMOTIVE MOSFET
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35
IRF
IRLL024Z
AUTOMOTIVE MOSFET
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74
IRF
IRLL024ZPBF
HEXFET㈢ Power MOSFET
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45
IRF
IRLL024ZPBF
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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0
INFINEON
IRLL024ZTR
Small Signal Field-Effect Transistor, 5A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
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0
IRF
IRLL024ZTRPBF
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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INFINEON
IRLL024ZTRPBF
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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0
IRF
IRLL110
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
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266
IRF
IRLL110
Power MOSFET
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156
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117
VISHAY
IRLL110
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
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4
IRF
IRLL110PBF
Power MOSFET
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156
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36
VISHAY
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