关闭背景特效

IRLL2705PBF [IRF]

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A ) ; HEXFET功率MOSFET（ VDSS = 55V ， RDS （ ON） = 0.04ヘ， ID = 3.8A ）

IRLL2705PBF


元器件型号：	IRLL2705PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A ) HEXFET功率MOSFET（ VDSS = 55V ， RDS （ ON） = 0.04ヘ， ID = 3.8A ）晶体晶体管功率场效应晶体管脉冲光电二极管 PC
PDF文件：	总9页 (文件大小：220K)
下载文档：	下载PDF数据表文档文件
型号参数：IRLL2705PBF参数

IRLL2705TR

Surface Mount

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32 IRF

IRLL2705TRPBF

DYNAMIC DV/DT RATING

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49 IRF

IRLL3303

HEXFET Power MOSFET

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102 IRF

IRLL3303

HEXFET Power MOSFET

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140 IRF

IRLL3303

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,

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2 IRF

IRLL3303PBF

HEXFET Power MOSFET

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40 IRF

IRLL3303PBF

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN

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0 IRF

IRLL3303TR

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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0 IRF

IRLL3303TR

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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0 IRF

IRLL3303TRPBF

暂无描述

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1 IRF

IRLM014A

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) | SOT-223

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69 ETC

IRLM110A

Advanced Power MOSFET

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114 FAIRCHILD

IRLM110ATF

100V N-Channel Logic Level A-FET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL

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0 FAIRCHILD

IRLM110ATF_NL

Power Field-Effect Transistor, 1.5A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4

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0 FAIRCHILD

IRLM120A

Advanced Power MOSFET

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94 FAIRCHILD

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