IRLR120 [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRLR120


型号：	IRLR120
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总6页 (文件大小：181K)
下载：	下载PDF数据表文档文件

IRLR120A

ADVANCED POWER MOSFET

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33 FAIRCHILD

IRLR120A

ADVANCED POWER MOSFET

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30 FAIRCHILD

IRLR120A

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

IRLR120ATF

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

IRLR120ATF

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

IRLR120ATM

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

IRLR120N

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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424 IRF

IRLR120NPBF

HEXFET㈢ Power MOSFET

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84 IRF

IRLR120NPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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2 INFINEON

IRLR120NTR

Advanced Process Technology

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53 IRF

IRLR120NTRLPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 INFINEON

IRLR120NTRLPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

IRLR120NTRPBF

Surface Mount (IRLR120N)

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52 IRF

IRLR120NTRPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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4 IRF

IRLR120NTRPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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1 INFINEON

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