OM5228SC [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN;
OM5228SC
型号: OM5228SC
厂家: Infineon    Infineon
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN

局域网 功效 二极管
文件: 总2页 (文件大小:16K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
OM5227SC OM5229SC OM5231SC  
OM5228SC OM5230SC OM5232SC  
HIGH EFFICIENCY RECTIFIER AND POWER  
SCHOTTKY IN ONE HERMETIC PACKAGE  
15 Amp, 50 To 600 Volt, 35 n sec Rectifier  
And 15 Amp, 45 Volt Schottky Combined In  
JEDEC TO-258AA Package  
FEATURES  
• Small Size, High Current  
• Hermetic Isolated JEDEC TO-258AA Package  
• Power Schottky and High Speed Rectifier Internally Connected  
• Low Thermal Resistance  
• OM803 Screening Available  
• Low Forward Drop  
• Available Screened To MIL-S-19500, TX, TXV And S Levels  
DESCRIPTION  
This series of products in a hermetic package is specifically designed for use in  
MOSFET circuits where high power inductive loads exist. This circuit arrangement  
eliminates the momentary shoot through condition caused by the slow recovery  
characteristics of a MOSFET parasitic diode.  
PRODUCT SUMMARY@ 25 C  
Schottky Diode  
High Speed Rectifier  
PIV  
Volts  
45  
IO  
Amps  
15  
PIV  
IO  
Amps  
15  
trr  
PART NUMBER  
Volts  
50  
n sec  
35  
OM5227SC  
OM5228SC  
OM5229SC  
OM5230SC  
OM5231SC  
OM5232SC  
45  
15  
100  
150  
200  
400  
600  
15  
35  
3.2  
45  
15  
15  
35  
45  
15  
15  
35  
45  
15  
15  
50  
45  
15  
15  
50  
SCHEMATIC  
MECHANICAL OUTLINE  
.270  
.240  
.695  
.685  
.165  
.155  
.045  
.035  
2
.835  
.815  
.707  
.697  
.550  
.530  
1
2
3
.092 MAX.  
.005  
.750  
.500  
3
1
.065  
.055  
.200 TYP.  
.140 TYP.  
Z-Tab package also available.  
4 11 R3  
Supersedes 1 07 R2  
3.2 - 55  
OM5227SC - OM5232SC  
ELECTRICAL SPECIFICATION –  
SCHOTTKY RECTIFIER MAXIMUM RATINGS (ALL PART NUMBERS)  
Rating  
Symbol  
All P/N  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
Volts  
45  
Average Rectified Forward Current (Rated VR) TC = 125°C  
IF(AV)  
IFRM  
15  
32  
Amps  
Amps  
Peak Repetitive Forward Currend  
(Rated VR, Square Wave, 20kHz) TC = 125°C)  
Non-Repetitive Peak Surge Current  
IFSM  
150  
Amps  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz)  
Operating Junction Temperature  
IRRM  
TJ  
1.0  
Amps  
°C  
-65 to +150  
-65 to +150  
1000  
Storage Temperature  
Tstg  
°C  
Voltage Rate of Change (Rated VR)  
dv/dt  
V/µs  
THERMAL CHARACTERISTICS  
Maximum Thermal Resistance, Junction-to-Case  
RqJC  
1.8  
°C/W  
Volts  
ELECTRICAL CHARACTERISTICS  
Maximum Instantaneous Forward Voltage (1)  
(IF = 15 Amp, TC = 125°C)  
VF  
0.57  
0.63  
(IF = 15 Amp, TC = 25°C)  
Maximum Instantaeous Reverse Current (1)  
(Rated dc Voltage, TC = 125°C)  
IR  
mA  
40  
(Rated dc Voltage, TC = 25°C)  
0.5  
* Pulse Test Width = 300 µs, 2% Duty Cycle  
ELECTRICAL SPECIFICATION – HIGH EFFICIENCY RECTIFIERS MAXIMUM RATINGS  
Rating  
Symbol OM5227 OM5228 OM5229 OM5230 OM5231 OM5232  
Unit  
Volts  
Amps  
Amps  
Peak Repetitive Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
150  
200  
400  
600  
Average Rectified Forward Current  
(Rated VR)  
IF(AV)  
15  
@ TC = 125°C  
Peak Repetitive Forward Current  
(Rated VR, Square Wave, 20 kHz)  
IFRM  
30  
@ TC = 125°C  
Non-Repetitive Peak Surge Current  
(Surge applied at rated load  
conditions halfwave, single  
phase, 60 Hz)  
IFSM  
150  
Amps  
°C  
3.2  
Operating Temperature and  
Storage Temperature  
TJ, Tstg  
-65 to +150  
THERMAL CHARACTERISTICS  
Maximum Thermal Resistance,  
Junction-to-Case  
RqJC  
2.0  
1.8  
°C/W  
ELECTRICAL CHARACTERISTICS  
Maximum Instantaneous Forward  
Voltage (1)  
VF  
(IF = 15 Amp, TC = 125°C)  
(IF = 15 Amp, TC = 25°C)  
.90  
1.10  
.90  
1.10  
.90  
1.10  
.90  
1.10  
1.20  
1.40  
1.4  
1.6  
Maximum Instantaneous Reverse  
Current (1)  
(Rated dc Voltage, TC = 125°C)  
(Rated dc Voltage, TC = 25°C)  
IR  
µA  
ns  
1000  
20  
2000  
20  
Maximum Reverse Recovery Time  
trr  
35  
60  
(IF = 0.5A, IR = 1.0A, IREC = .25A)  
(1) Pulse Test Width = 300 µs, Duty Cycle 2.0%  
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246  

相关型号:

OM5228SCT

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5228SCV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5229SC

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5229SCT

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5229SCV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5230SC

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5230SCT

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5230SCV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5231SCT

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5231SCV

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN
INFINEON

OM5232

CMOS single-chip 8-bit microcontroller
NXP

OM5232/FBB

CMOS single-chip 8-bit microcontroller
NXP