OM6050SJPBF [INFINEON]
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, TO-267, 3 PIN;
| 型号： | OM6050SJPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, TO-267, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6050SJ OM6052SJ OM6054SJ
OM6051SJ OM6053SJ OM6055SJ
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
FEATURES
• Isolated Hermetic Metal Package
• Size 7 Die, High Energy
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
@ 25°C
MAXIMUM RATINGS
PART NUMBER
VDS
RDS(on)
ID (Continuous)
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
100 V
200 V
500 V
600 V
800 V
1000 V
.014
.030
.160
.230
.500
.800
100 A
55 A
30 A
25 A
18 A
10 A
3.1
SCHEMATIC
MECHANICAL OUTLINE
.290
.260
.805
.795
.165
ø
1
.155
.065
.055
.150
.140
.950
.930
.665
.645
1
2
3
.750
.500
3
.065
.055
.200
ø
.160
.200
.400
2
TO-267
4 11 R0
3.1 - 105
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted)
Parameter
Symbol
VDS
VDGR
ID
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
Unit
V
Drain Source Voltage
100
100
100
43
200
200
55
500
500
30
600
600
25
800
800
18
1000
1000
10
Drain Gate Voltage (RGS = 1.0 M )
Continuous Drain Current @ TC = 25°C 2
Continuous Drain Current @ TC = 100°C 2
V
A
ID
23
13
10
7
4
A
1
Pulsed Drain Current
IDM
235
135
80
75
50
30
A
Max. Power Dissipation @ TC = 25°C
Max. Power Dissipation @ TC = 100°C
Linear Derating Factor Junction-to-Case
Linear Derating Factor Junction-to-Ambient
Operating and Storage Temp. Range
PD
280
110
W
PD
W
2.22
.025
W/°C
W/°C
° C
° C
TJ, Tstg
-55 to +150
275
Lead Temperature (1/16" from case for 10 sec.)
Notes: 1. Pulse Test: Pulse Width £300 msec, Duty Cycle £2%.
2. Package Pin Limitation: 35 Amps.
THERMAL RESISTANCE (MAXIMUM) @ T = 25 C
A
Junction-to-Case
RthJC
.45
° C/W
° C/W
Junction-to-Ambient (Free Air Operation)
RthJA
40
PRELIMINARY ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Test Condition
VDS = VGS, ID = 250µA
VGS = ±20 VDC
Symbol
VGS(th)
IGSS
Part No.
All
Min.
Max.
4.0
Units
V
Gate Threshold Voltage
Gate Source Leakage Current
Off State Drain-Source Leakage
2.0
All
±100
10
nA
VDS = VDSS x 0.8
VGS = 0V
TC = 25°C
TC = 125°C
IDSS
All
µA
IDSS
All
.10
mA
3.1
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
100
200
500
600
800
1000
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250 µA
VDSS
V
.014
.030
.160
.230
.500
.800
Drain-Source Breakdown Voltage
VGS = 10V, ID = ID25 x 0.5
RDS(on)
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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