SD453N [INFINEON]

FAST RECOVERY DIODES Stud Version; 快恢复二极管梭哈版本
SD453N
型号: SD453N
厂家: Infineon    Infineon
描述:

FAST RECOVERY DIODES Stud Version
快恢复二极管梭哈版本

二极管 快恢复二极管 快速恢复二极管
文件: 总11页 (文件大小:484K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Previous Datasheet  
Index  
Next Data Sheet  
DISCRETE POWER DIODES and THYRISTORS  
DATA BOOK  
To Order  
 
Previous Datasheet  
Index  
Next Data Sheet  
6/A  
SD453N/R SERIES  
Stud Version  
FAST RECOVERY DIODES  
Features  
400A  
450A  
High power FAST recovery diode series  
2.0 to 3.0 µs recovery time  
High voltage ratings up to 2500V  
High current capability  
Optimized turn on and turn off characteristics  
Low forward recovery  
Fast and soft reverse recovery  
Compression bonded encapsulation  
Stud version case style B-8  
Maximum junction temperature 150°C  
Typical Applications  
Snubber diode for GTO  
High voltage free-wheeling diode  
Fast recovery rectifier applications  
Major Ratings and Characteristics  
SD453N/R  
Parameters  
Units  
S20  
S30  
IF(AV)  
400  
450  
A
°C  
A
@ TC  
70  
70  
IF(RMS)  
IFSM  
630  
710  
@ 50Hz  
@ 60Hz  
9300  
9730  
9600  
10050  
A
A
V
t
RRM range  
1200 to 2500 1200 to 2500  
V
2.0  
25  
3.0  
25  
µs  
°C  
°C  
rr  
@ TJ  
case style  
B-8  
TJ  
- 40 to 150  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VRRM , maximum repetitive  
VRSM , maximum non-  
IRRM max.  
Type number  
SD453N/R  
peak reverse voltage  
V
repetitive peak rev. voltage  
V
@ TJ = TJ max.  
mA  
12  
16  
1200  
1600  
1300  
1700  
50  
20  
25  
2000  
2500  
2100  
2600  
Forward Conduction  
SD453N/R  
Parameter  
Units Conditions  
S20  
400  
70  
S30  
450  
70  
IF(AV) Max. average forward current  
@ case temperature  
A
180° conduction, half sine wave  
°C  
IF(RMS) Max. RMS forward current  
@ case temperature  
630  
55  
710  
52  
A
°C  
IFSM  
Max. peak, one-cycle forward,  
non-repetitive surge current  
9300  
9730  
7820  
8190  
432  
9600  
10050  
8070  
8450  
460  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
A
t = 8.3ms reapplied  
Sinusoidal half wave,  
I2t  
Maximum I2t for fusing  
t = 10ms No voltage Initial TJ = TJ max.  
t = 8.3ms reapplied  
395  
420  
KA2s  
306  
326  
t = 10ms 100% VRRM  
279  
297  
t = 8.3ms reapplied  
I2t  
Maximum I2t for fusing  
4320  
4600  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VF(TO)1 Low level value of threshold  
1.00  
1.09  
0.95  
1.04  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
voltage  
V
VF(TO)2 High level value of threshold  
voltage  
(I > π x IF(AV)),TJ = TJ max.  
r
Low level value of forward  
slope resistance  
1
f
mΩ  
0.80  
0.60  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
(I > π x IF(AV)),TJ = TJ max.  
r
High level value of forward  
slope resistance  
2
f
0.74  
2.20  
0.54  
1.85  
VFM  
Max. forward voltage drop  
V
I = 1500A, TJ = TJ max, t = 10ms sinusoidal wave  
pk p  
Recovery Characteristics  
Testconditions  
Max.values @TJ=150°C  
TJ = 25oC  
Code  
typical t  
I
di/dt  
V
t
Q
I
rr  
pk  
r
rr  
rr  
rr  
@ 25% IRRM Square Pulse  
@ 25% IRRM  
(µs)  
2.0  
3.0  
(A)  
(A/µs)  
50  
(V)  
- 50  
- 50  
(µs)  
(µC)  
250  
380  
(A)  
120  
150  
S20  
S30  
1000  
1000  
3.5  
5.0  
50  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
Fig. 3 - Current Ratings Characteristics  
Fig. 5 - Forward Power Loss Characteristics  
Fig. 6 - Forward Power Loss Characteristics  
D-649  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 7 - Forward Power Loss Characteristics  
Fig. 8 - Forward Power Loss Characteristics  
Fig. 9 - Maximum Non-repetitive Surge Current  
Fig. 10 - Maximum Non-repetitive Surge Current  
Fig.11 - Maximum Non-repetitive Surge Current  
Fig.12 - Maximum Non-repetitive Surge Current  
D-650  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 13 - Forward Voltage Drop Characteristics  
Fig. 14 - Forward Voltage Drop Characteristics  
Fig. 15 - Thermal Impedance ZthJC Characteristic  
Fig. 16 - Typical Forward Recovery Characteristics  
Fig. 17 - Typical Forward Recovery Characteristics  
D-651  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 19 - Recovery Charge Characteristics  
Fig. 18 - Recovery Time Characteristics  
Fig. 20 - Recovery Current Characteristics  
Fig. 23 - Recovery Current Characteristics  
Fig. 25 - Frequency Characteristics  
Fig. 21 - Recovery Time Characteristics  
Fig. 22 - Recovery Charge Characteristics  
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics  
D-652  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 27 - Frequency Characteristics  
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 29 - Frequency Characteristics  
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 31 - Frequency Characteristics  
D-653  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD453N/R Series  
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 33 - Frequency Characteristics  
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics  
Fig. 35 - Frequency Characteristics  
D-654  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
D453N/R Series  
Thermal and Mechanical Specifications  
SD453N/R  
Parameter  
Units Conditions  
S20  
S30  
TJ  
T
Max. junction operating temperature range  
Max. storage temperature range  
-40 to 150  
°C  
-40 to 150  
stg  
RthJC Max. thermal resistance, junction to case  
0.1  
DC operation  
K/W  
RthCS Max. thermal resistance, case  
to heatsink  
Mounting surface, smooth, flat and  
greased  
0.04  
T
Mounting torque, ± 10%  
Approximate weight  
50  
Nm  
g
Not lubricated threads  
wt  
454  
Case style  
B-8  
See Outline Table  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units Conditions  
TJ = TJ max.  
S20  
S30  
S20  
S30  
180°  
120°  
90°  
0.010  
0.010  
0.008  
0.008  
0.014  
0.017  
0.025  
0.042  
0.014  
0.017  
0.025  
0.042  
0.014  
0.019  
0.026  
0.042  
0.014  
0.019  
0.026  
0.042  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
SD 45  
3
N
25 S30 P  
S
C
3
1
2
4
5
6
7
8
9
1
2
3
4
-
-
-
-
Diode  
Essential part number  
3 = Fast recovery  
N = Stud Normal Polarity (Cathode to Stud)  
R = Stud Reverse Polarity (Anode to Stud)  
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)  
t code (see Recovery Characteristics table)  
rr  
P = Stud base B-8 3/4" 16UNF-2A  
M = Stud base B-8 M24 X 1.5  
8
-7 S = Isolated lead with silicone sleeve  
(Red = Reverse Polarity; Blue = Normal Polarity)  
None = Not isolated lead  
T = Threaded Top Terminal 3/8" 24UNF-2A  
9
-
C = Ceramic housing  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
SD
Outlines Table  
CERAMIC HOUSING  
26 (1.023) MAX.  
5(0.20) ± 0.3(0.01)  
10.5 (0.41) DIA.  
12 (0.47) MIN.  
Case Style B-8  
All dimensions in millimeters (inches)  
2
C.S. 70mm  
38 (1.5)  
DIA. MAX.  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.  
17 (0.67) DIA.  
3/8"-24UNF-2A  
CERAMIC HOUSING  
38 (1.5)  
DIA. MAX.  
Case Style B-8 with top thread terminal 3/8"  
All dimensions in millimeters (inches)  
SW 45  
3/4"-16UNF-2A *  
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.  
To Order  
 

相关型号:

SD453N/R12

Fast Recovery Diodes (Stud Version), 400/450 A
VISHAY

SD453N/R16

Fast Recovery Diodes (Stud Version), 400/450 A
VISHAY

SD453N/R20

Fast Recovery Diodes (Stud Version), 400/450 A
VISHAY

SD453N/R25

Fast Recovery Diodes (Stud Version), 400/450 A
VISHAY

SD453N12S20MC

FAST RECOVERY DIODES
INFINEON

SD453N12S20MSC

FAST RECOVERY DIODES
INFINEON

SD453N12S20MSC

Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN
VISHAY

SD453N12S20MSCPBF

Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, CERAMIC, B-8, 1 PIN
INFINEON

SD453N12S20MTC

FAST RECOVERY DIODES
INFINEON

SD453N12S20MTC

Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN
VISHAY

SD453N12S20PC

FAST RECOVERY DIODES
INFINEON

SD453N12S20PSC

FAST RECOVERY DIODES
INFINEON