ST1230C16K3LPBF [INFINEON]
Silicon Controlled Rectifier, 3200A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, KPUK-2;
| 型号： | ST1230C16K3LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 3200A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, KPUK-2 |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25194 rev. B 01/00
ST1230C..K SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
1745A
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style A-24 (K-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST1230C..K
1745
Units
A
@ T
55
°C
hs
IT(RMS)
3200
A
@ T
25
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
33500
35100
5615
A
A
I2t
KA2s
KA2s
5126
VDRM/VRRM
800 to 1600
200
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST1230C..K Series
Bulletin I25194 rev. B 01/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
repetitive peak voltage
V
V
08
800
900
12
1200
1400
1600
1300
1500
1700
ST1230C..K
14
100
16
On-state Conduction
Parameter
ST1230C..K
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
1745 (710)
55 (85)
3200
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
33500
35100
28200
29500
5615
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
5126
KA2s
3971
3625
I2√t
Maximum I2√t for fusing
56150
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.93
1.02
0.17
0.16
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.62
600
V
I = 4000A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
2
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ST1230C..K Series
Bulletin I25194 rev. B 01/00
Switching
Parameter
ST1230C..K
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.9
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
Typical turn-off time
200
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST1230C..K
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max. linear to 80% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
100
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST1230C..K
Units Conditions
PGM
16
3
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
200
MAX.
-
TJ = - 40°C
IGT
DC gate current required
to trigger
100
50
200
mA TJ = 25°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
TJ = 125°C
TJ = - 40°C
1.4
1.1
0.9
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ
= 25°C
T
J = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
0.25
mA
V
TJ = TJ max
VGD
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3
ST1230C..K Series
Bulletin I25194 rev. B 01/00
Thermal and Mechanical Specification
Parameter
ST1230C..K
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.042
0.021
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.006
0.003
24500
(2500)
425
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
A-24 (K-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
60°
30°
Ordering Information Table
Device Code
ST 123
0
C
16
K
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
K = Puk Case A-24 (K-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST1230C..K Series
Bulletin I25194 rev. B 01/00
Outline Table
1 (0.04) MIN.
TWO PLACES
47.5 (1.87) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
130
120
110
100
90
130
120
110
100
90
ST1230C..K Series
(Single Side Cooled)
ST1230C..K Series
(Single Side Cooled)
R
(DC) = 0.042 K/W
R
(DC) = 0.042 K/W
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
30˚
80
60˚
60
70
90˚
30˚
50
60˚
120˚
180˚
60
90˚
40
120˚
50
180˚
30
DC
40
20
0
200 400 600 800 1000 1200 1400
0
400
800
1200 1600 2000
AverageOn-stateCurrent(A)
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
ST1230C..KSeries
Bulletin I25194 rev. B 01/00
130
130
120
110
100
90
ST1230C..K Series
ST1230C..K Series
(Double Side Cooled)
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.021 K/W
R
(DC) = 0.021 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
80
30˚
70
70
60˚
30˚
60
60˚
60
90˚
90˚
50
120˚
50
40
180˚
120˚
40
30
180˚
DC
30
20
0
500
1000 1500 2000 2500
0
500 1000 1500 2000 2500 3000 3500
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
4000
3500
3000
2500
2000
1500
1000
500
5000
4000
3000
2000
1000
0
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
ST1230C..K Series
ST1230C..K Series
T
= 125˚C
J
T
= 125˚C
J
0
0
400 800 1200 1600 2000 2400
Average On-state Current (A)
0
500 1000 1500 2000 2500 3000 3500
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
30000
28000
26000
24000
22000
20000
18000
16000
14000
34000
32000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125˚C
Rated V
Applied Following Surge.
RRM
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V RRMReapplied
ST1230C..K Series
ST1230C..K Series
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST1230C..K Series
Bulletin I25194 rev. B 01/00
10000
1000
100
T = 25˚C
J
T = 125˚C
J
ST1230C..K Series
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1
0.01
Steady State Value
= 0.042 K/W
R
thJ-hs
(Single Side Cooled)
= 0.021 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST1230C..K Series
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
100
10
1
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
(b)
(3)
(2)
(1)
VGD
IGD
Device: ST1230C..K Series
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
7
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