ST23016P0 [IRF]

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC;
ST23016P0
元器件型号: ST23016P0
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

栅 栅极
PDF文件: 总1页 (文件大小:31K)
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型号参数:ST23016P0参数

ST23016P0PBF

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P1

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P1PBF

暂无描述

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0 IRF

ST23016P2

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST2301A

P Channel Enhancement Mode MOSFET

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208 STANSON

ST2301M

P Channel Enhancement Mode MOSFET

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74 STANSON

ST2301MSRG

P Channel Enhancement Mode MOSFET

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39 STANSON

ST2301SRG

P Channel Enhancement Mode MOSFET

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63 STANSON

ST2302

N Channel Enchancement Mode MOSFET

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803 STANSON

ST2302M

N Channel Enhancement Mode MOSFET

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131 STANSON

ST2302MSRG

N Channel Enhancement Mode MOSFET

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76 STANSON

ST2303

P Channel Enchancement Mode MOSFET

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197 STANSON

ST2303SRG_V2

P Channel Enhancement Mode MOSFET

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27 ETC

ST2304

N Channel Enchancement Mode MOSFET

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154 STANSON

ST2304SRG

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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28 STANSON