T85HFL10S02PBF
更新时间:2024-09-18 13:01:02
品牌:INFINEON
描述:Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, D-56, 2 PIN
T85HFL10S02PBF 概述
Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, D-56, 2 PIN
T85HFL10S02PBF 数据手册
通过下载T85HFL10S02PBF数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Bulletin I27107 rev. A 09/97
T..HFL SERIES
T-Modules
FAST RECOVERY DIODES
Features
40 A
70 A
85 A
Fast recovery time characteristics
Electrically isolated base plate
3500 V
isolating voltage
RMS
Standard JEDEC package
Simplified mechanical designs,
rapid assembly
Large creepage distances
UL E78996 approved
Description
This serie of T-module uses fast recovery power diodes in
a single diode configuration. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction
with the thyristor modules as a freewheel diode. Applica-
tion includes self-commutated inverters, DC choppers,
motor control, inductive heating and electronic welders.
These modules are intended for those applications where
very fast recovery characteristics are required and for
general power switching applications.
Major Ratings and Characteristics
Parameters
T40HFL T70HFL T85HFL Units
I
40
63
70
110
85
A
A
A
A
F(AV)
I
133
F(RMS)
I
50Hz
475
500
1130
1030
830
1300
1370
8550
7810
FSM
60Hz
50Hz
60Hz
870
2
2
I t
V
3460
A s
2
3160
A s
range
100 to 1000
200 to 1000
-40 to 125
V
RRM
t
range
range
ns
oC
rr
T
J
www.irf.com
1
T..HFL Series
Bulletin I27107 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Typenumber Voltage
Code
trr
Code
VRRM , maximum repetitive VRSM,maximumnon-repetitive IRRMmax.
peak reverse voltage
peak reverse voltage
TJ=@25°C
V
100
V
150
µ A
100
10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S05, S10
T40HFL..
T70HFL..
T85HFL..
20
40
200
400
600
800
1000
300
500
700
900
1100
60
80
100
S05, S10
Forward Conduction
Parameters
T40HFL T70HFL T85HFL Units Conditions
IF(AV) Max. averagefwdcurrent
@Casetemperature
40
70
70
70
85
A
oC
A
180o conduction,halfsinewave
70
IF(RMS) Max.RMSforwardcurrent
63
110
830
870
700
730
3460
3160
2450
2230
133
IFSM
Max. peak, one-cycle
forward,non-repetitive
surge current
475
500
400
420
1130
1030
800
730
1300
1370
1100
1150
8550
7810
6050
5520
A
t=10ms Novoltage
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
Sinusoidalhalfwave,
Initial TJ=TJmax.
I2t
MaximumI2tforfusing
A2s t=10ms Novoltage
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
I2√t
MaximumI2√tforfusing
11300 34600 85500 A2√s t=0.1to10ms,novoltagereapplied
V
F(TO)1 Lowlevelvalueofthreshold
voltage
0.82
0.84
0.87
0.90
0.84
0.86
V
TJ = 25 oC, (16.7% x π x IF(AV) < I < π x IF(AV)
)
VF(TO)2 Highlevelvalueofthreshold
voltage
TJ = 25 oC, (I > π x IF(AV)
)
rf1
Lowlevelvalueofforward
slope resistance
Highlevelvalueofforward
slope resistance
7.0
6.8
2.77
2.67
2.15 mΩ TJ = 25 oC, (16.7% x π x IF(AV) < I < π x IF(AV)
)
rf2
2.07
1.55
TJ = 25 oC, (I > π x IF(AV)
)
IFM =πxIF(AV),TJ = 25oC, tp=400µssquarewave
VFM
Max. forward voltage drop
1.60
1.73
V
2
Av.power=VF(TO) x IF(AV) +rfx(IF(RMS)
)
Blocking
Parameters
T40HFL T70HFL T85HFL Units Conditions
IRRM Max.peakrev.leak.current
VINS RMSisolationvoltage
20
mA TJ = 125oC
3500
V
50Hz,circuittobase,allterminalsshorted
TJ =25°C,t=1s
2
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
Thermal and Mechanical Specifications
Parameters
T40HFL T70HFL T85HFL Units Conditions
TJ
Tstg
Junctionoperatingtemp.
-40to125
-40to150
oC
oC
Storage temperature range
RthJC Max.internalthermal
resistancejunctiontocase
RthC-S Thermalresistance, case
toheatsink
0.85
0.53
0.46
K/W Permodule,DCoperation
Mountingsurfaceflat,smoothandgreased.
K/W
0.2
Permodule
T
Mounting
Baseto
1.3±10%
Nm M3.5mountingscrews(2)
torque±10% heatsink
BusbartoTerminal
Non-lubricated threads
Nm M5screwsterminals;non-lubricatedthreads
3±10%
54 (19)
D-56
wt
Approximateweight
Casestyle
g (oz) See outline table
T-MODULE
(2) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the
spread of the compound
∆R Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
180o
0.06
0.05
0.04
120o
0.08
0.06
0.05
90o
60o
30o
180o
0.05
0.04
0.03
120o
0.08
0.06
0.05
90o
60o
30o
T40HFL
T70HFL
T85HFL
0.10
0.08
0.06
0.14
0.11
0.09
0.24
0.19
0.15
0.10
0.08
0.07
0.15
0.12
0.09
0.24 K/W
0.19
0.015
Reverse Recovery Characteristics
T40HFL
T70HFL
T85HFL
Parameter
Units
Conditions (*)
S02 S05 S10 S02 S05 S10 S02 S05 S10
trr Maximum reverse
recovery time
TJ = 25 °C, -diF/dt = 100A/µs
IF = 1 A to VR = 30V
70 110 270 70 110 270 80 120 290 ns
200 500 1000 200 500 1000 200 500 1000 ns
TJ = 25 °C, -diF/dt = 25A/µs
IFM = π x rated IF(AV),VR = -30 V
Qrr Maximum reverse
recovered charge
TJ = 25 °C, -diF/dt = 100A/µs
IF = 1 A to VR = 30V
0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6
0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5
µC
µC
TJ = 25 °C, -diF/dt = 25A/µs
IFM = π x rated IF(AV)VR = -30 V
(*) Tested on LEM 300A Diodemeter Tester
3
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
Ordering Information Table
Device Code
T
40 HFL 100 S10
2
3
4
5
1
1
2
-
-
Module type
Currentrating:
40 = 40A (avg)
70 = 70A (avg)
85 = 85A (avg)
3
4
5
-
-
-
Fast recovery diode
Voltage code : code x 10 = V
RRM
trr code: S02 = 200ns
S05 = 500ns
S10 = 1000ns
Outline Table
All dimensions in millimeters (inches)
4
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
130
120
110
100
90
130
120
110
100
90
T40HFL.. Serie s
T40HFL.. Serie s
R
(DC) = 0.85 K/W
R
(DC) = 0.85 K/W
thJ C
thJC
Conduc tion Pe riod
Cond uc tio n Angle
80
80
30°
60°
30°
70
60°
70
90°
90°
120°
120°
180°
60
60
180°
DC
60
50
50
0
0
0
10
20
30
40
50
0
0
0
10
20
30
40
50
70
Ave ra g e Forwa rd C urre nt (A)
Ave ra ge Fo rwa rd C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
T70HFL.. Serie s
T70HFL.. Se rie s
R
(DC) = 0.53 K/ W
R
(DC) = 0.53 K/W
thJC
thJC
C o nd uc tio n Ang le
C o nd uc tio n Perio d
80
80
30°
30°
70
70
60°
60°
90°
90°
120°
120°
180°
60
60
180°
DC
100
50
50
10 20 30 40 50 60 70 80
Ave ra ge Forwa rd Curre nt (A)
20
40
60
80
120
Ave ra g e Forwa rd C urre nt (A)
Fig.4-CurrentRatingsCharacteristics
Fig.3-CurrentRatingsCharacteristics
130
120
110
100
90
130
120
110
100
90
T85HFL.. Se rie s
T85HFL.. Serie s
R
(DC ) = 0.46 K/W
R
(DC) = 0.46 K/W
thJC
thJC
Cond uc tio n Angle
Conduc tion Pe riod
80
80
30°
30°
60°
60°
70
70
90°
90°
120°
120°
180°
60
60
180°
DC
50
50
10 20 30 40 50 60 70 80 90
Ave ra g e Fo rwa rd C urre nt (A)
20
40
60
80 100 120 140
Ave ra ge Forwa rd Curre nt (A)
Fig.5-CurrentRatingsCharacteristics
Fig.6-CurrentRatingsCharacteristics
5
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
90
80
70
60
50
40
30
20
10
0
70
180°
120°
90°
60°
DC
180°
120°
90°
60°
30°
60
50
40
30
20
10
0
30°
RMS Limit
RMS Lim it
C ond uc tion Pe rio d
Co nd uc tion Ang le
T40HFL.. Se rie s
T40HFL.. Serie s
T = 125°C
T = 125°C
J
J
0
10
20
30
40
50
60
70
0
5
10 15 20 25 30 35 40
Ave ra g e Forwa rd C urre nt (A)
Ave ra ge Fo rwa rd C urre nt (A)
Fig.7-ForwardPowerLossCharacteristics
Fig.8-ForwardPowerLossCharacteristics
100
90
80
70
60
50
40
30
20
10
0
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Lim it
60
Co nd uc tion Pe rio d
Cond uc tio n Ang le
40
T70HFL.. Se rie s
T70HFL.. Se rie s
20
T = 125°C
T = 125°C
J
J
0
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
Ave ra g e Forwa rd Curre nt (A)
Ave ra g e Forwa rd Curre nt (A)
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
160
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
60
C ond uc tion Pe riod
Cond uc tio n Ang le
40
T85HFL.. Serie s
T85HFL.. Se rie s
T
= 125°C
T = 125°C
20
J
J
0
0
10 20 30 40 50 60 70 80 90
Ave ra ge Forwa rd Curre nt (A)
0
20
40
60
80
100 120 140
Ave ra ge Forwa rd C urre nt (A)
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
6
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
450
400
350
300
250
200
150
100
500
450
400
350
300
250
200
150
100
At Any Ra te d Lo a d C o n d itio n And With
Ma xim um No n Re pe titive Surg e Curre nt
Ra ted V
Ap p lie d Fo llo win g Surg e .
Ve rsus Pulse Tra in Dura tio n.
RRM
Initia l T = 125°C
Initia l T = 125°C
J
J
No Vo lta ge Re a p p lie d
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Ra te d V
Re a p p lie d
RRM
T40HFL.. Serie s
T40HFL.. Serie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
1
Num be r Of Equa l Amp litude Ha lf Cyc le Curre nt Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
800
850
Ma xim um Non Re p e titive Surge Curre nt
At Any Ra te d Lo a d C o nd itio n And With
Ve rsus Pulse Tra in Dura tio n.
Ra te d V
Ap p lie d Fo llo win g Su rg e .
RRM
750
650
550
450
350
250
150
Initia l T = 125°C
700
600
500
400
300
200
Initia l T = 125°C
J
J
No Volta g e Re a p plie d
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Ra te d V
Re a p plie d
RRM
T70HFL.. Serie s
T70HFL.. Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
Fig. 16 - Maximum Non-Repetitive Surge Current
1
Numbe r O f Equa l Amp litud e Ha lf Cyc le Current Pulse s (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
1200
1300
At Any Ra te d Lo a d Co nd itio n And With
Ma ximu m No n Re p etitive Surg e C u rre nt
1200
1100
1000
900
800
700
600
500
400
300
Ve rsus Pulse Tra in Dura tion.
Ra te d V
Ap p lied Fo llo wing Surg e .
1100
1000
900
800
700
600
500
400
300
RRM
Initia l T = 125°C
Initia l T = 125°C
J
J
No Vo lta g e Re a p p lie d
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Ra te d V
Re a pp lie d
RRM
T85HFL.. Serie s
T85HFL.. Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Numbe r Of Eq ua l Amp litud e Ha lf Cyc le Curre nt Pulse s (N)
Fig. 18 - Maximum Non-Repetitive Surge Current
Fig. 17 - Maximum Non-Repetitive Surge Current
7
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
8
7
6
5
4
3
2
1
20
18
16
14
12
10
8
0.51
0.5
I
= 300A
220A
172A
100A
FM
I
= 300A
FM
220A
172A
100A
50A
50A
I
= 300A
FM
0.49
0.48
0.47
0.46
0.45
220A
172A
100A
50A
T40HFL..S02
T70HFL..S02
T40HFL..S02
T70HFL..S02
T40HFL..S02
T70HFL..S02
6
T = 125 °C
T
= 125 °C
J
J
T
= 125 °C
J
4
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of Forwa rd C urre nt - d i/ d t (A/ µs)
Ra te O f Fa ll Of Fo rwa rd Curre n t - d i/d t (A/ µs)
Ra te Of Fa ll Of Forwa rd C urre nt - d i/ d t (A/ µs)
Fig. 19 - Recovery Time Characteristics
Fig. 20 - Recovery Charge Characteristics
Fig. 21 - Recovery Current Characteristics
1.1
1
20
28
26
24
22
I
= 300A
220A
172A
100A
50A
I
= 300A
FM
FM
18
16
14
12
10
8
220A
172A
100A
50A
I
= 300A
FM
20
18
16
0.9
0.8
0.7
0.6
220A
172A
100A
14
12
10
50A
T40HFL..S05
T70HFL..S05
T40HFL..S05
T70HFL..S05
T40HFL..S05
T70HFL..S05
6
T = 125 °C
8
6
T = 125 °C
T = 125 °C
J
J
J
4
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/ d t (A/µs) Ra te Of Fa ll Of Fo rwa rd Curre n t - d i/ d t (A/µs)
Ra te Of Fa ll Of Fo rwa rd Curre n t - d i/d t (A/ µs)
Fig. 22 - Recovery Time Characteristics
Fig. 24 - Recovery Current Characteristics
Fig. 23 - Recovery Charge Characteristics
45
1.8
1.7
40
I
= 300A
FM
I
= 300A
FM
200A
100A
35
30
25
20
15
10
5
40
35
30
I
= 300A
FM
200A
100A
1.6
1.5
1.4
1.3
1.2
1.1
1
50A
200A
100A
50A
25
20
15
10
50A
T40HFL..S10
T70HFL..S10
T
T40HFL..S10
T70HFL..S10
T = 125 °C
T40HFL..S10
T70HFL..S10
= 125 °C
J
J
T
= 125 °C
J
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of Fo rwa rd Curre n t - d i/d t (A/ µs)
Ra te Of Fa ll O f Fo rwa rd C urre n t - d i/ d t (A/ µs)
Ra te O f Fa ll O f Fo rwa rd Curre nt - d i/ d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics Fig. 27 - Recovery Current Characteristics
8
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
25
20
15
10
5
28
26
1.2
1.1
1
I
= 300A
200A
100A
50A
FM
I
= 300A
FM
24
22
20
18
16
14
12
10
8
200A
100A
50A
I
= 300A
FM
0.9
0.8
0.7
0.6
200A
100A
50A
T85HFL..S02
T = 125°C
T85HFL..S02
T85HFL..S02
T = 125 °C
T = 125°C
J
J
J
6
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/ d t (A/ µs) Ra te O f Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)
Fig. 28 - Recovery Time Characteristics
Fig. 30 - Recovery Current Characteristics
Fig. 29 - Recovery Charge Characteristics
1.3
30
35
I
= 300A
200A
I
= 300A
FM
FM
27
24
21
200A
100A
50A
1.2
30
25
20
15
10
I
= 300A
100A
50A
FM
1.1
1
18
15
12
9
200A
100A
50A
0.9
0.8
T85HFL..S05
= 125°C
T85HFL..S05
T = 125°C
T85HFL..S05
= 125°C
T
J
T
J
J
6
10
100
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll O f Fo rwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll O f Fo rwa rd C urre nt - d i/ d t (A/µs) Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/ d t (A/ µs)
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics Fig. 33 - Recovery Current Characteristics
2
1.9
1.8
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
I
= 300A
I
= 300A
FM
FM
200A
200A
I
= 300A
FM
100A
50A
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
100A
200A
100A
50A
T85HFL..S10
T = 125°C
50A
T85HFL..S10
= 125°C
T85HFL..S10
T
T = 125°C
J
J
J
10 20 30 40 50 60 70 80 90 100
10
100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll O f Forwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of Fo rwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll O f Fo rwa rd C urre n t - d i/ d t (A/µs)
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
9
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
1E4
T40HFL.. Se rie s
Tra pe zo id a l Pulse
T C = 70 °C
tp
1E3
100 0
20000 10000 5000 2500 1500
1E2
400
50 Hz
200
5000 2500
400
50 Hz
1500 1000
200
T40HFL.. Serie s
Sinuso id a l Pulse
T
= 70°C
tp
C
1E1
1E1
1E1
1E41
1E2
1E3
1E2
1E3
1E4
Pu lse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 37 - Frequency Characteristics
1E4
1E3
1E2
1E1
T40HFL..
Tra p e zo id a l Pulse
= 90 °C
T
tp
C
20000 10000 5000 2500 1500 1000
400
200
50 Hz
1500
400
200
50 Hz
5000 2500
1000
T40HFL.. Se rie s
Sinuso id a l Pulse
T
= 90°C
C
tp
1E1
1E41
1E1
1E2
1E3
1E2
1E3
1E4
Pu lse Ba se wid th (µs)
Pulse Ba se w idth (µs)
Fig. 38 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 joule s p e r pulse
10
20 jou le s p er p ulse
4
10
2
1
4
2
0.4
0.2
1
0.4
0.1
0.2
0.04
0.02
0.1
0.04
0 .02
0.01
0.01
T40HFL.. Se rie s
T40HFL.. Se rie s
Tra p e zo id a l Pulse
Sinuso id a l Pulse
T
= 125°C
J
T
= 125 °C
tp
tp
J
d i/d t = 50A/µs
1E1
1E2
1E3
1E411E1
1E2
1E3
1E4
Pu lse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 39 - Maximum Forward Energy Power Loss Characteristics
10
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
1E4
1E3
1E2
1E1
5000
20000 10000
2500 1500 1000
400
200
50 Hz
5000
1500
4 00
2500
1000
200
50 Hz
T70HFL.. Se rie s
Sinu so id a l Pulse
= 70°C
T70HFL.. Se rie s
Tra p e zoid a l Pulse
= 70°C
T
T
tp
C
tp
C
1E1
1E2
1E3
1E41E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 40 - Frequency Characteristics
1E4
1E3
1E2
1E1
2000 0 10000 5000 2500
1500 1000
400
200
50 Hz
250 0
5000
1500 1000
400
2 00
50 Hz
T70HFL.. Se rie s
Tra p e zoid a l Pulse
T70HFL.. Se rie s
Sinu so id a l Pulse
T = 90°C
T
= 90°C
tp
C
C
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 41 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 jo ules p e r p ulse
20 jo u les p e r p u lse
10
10
4
4
2
1
2
1
0.4
0.2
0.4
0.2
0.1
0.04
0.02
0.1
0.04
0.02
0.01
0.01
T70HFL.. Se rie s
T70HFL.. Se rie s
Sinusoid a l Pulse
Tra p e zo id a l p ulse
tp
T
J
= 125°C
T
= 125°C
J
tp
d i/d t = 50A/µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pu lse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 42 - Maximum Forward Energy Power Loss Characteristics
11
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
1E4
1E3
20000
1000 0
5000 2500 1500
400
200
50 Hz
1000
5000 2500
1500 1000
40 0
200
50 Hz
1E2
1E1
T85HFL.. Se rie s
T85HFL.. Se rie s
Sinuso id a l Pu lse
= 70°C
Tra pe zo id a l Pulse
= 70°C
T
tp
C
T
C
tp
1E1
1E2
1E3
1E14
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 43 - Frequency Characteristics
1E4
1E3
1E2
1E1
400
200
5000 2500 1500 1 000
50 Hz
20000 10000
5000 2500 1500 1000
400
200
50 Hz
T85HFL.. Se rie s
Tra p e zo id a l Pu lse
= 90°C
T85HFL.. Se rie s
Sinuso id a l P ulse
= 90°C
T
C
tp
T
tp
C
1E1
1E2
1E3
1E41E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pu lse Ba se wid th (µs)
Fig. 44 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 jo ule s p e r p ulse
20 jo u le s p er p u lse
10
4
10
4
2
1
2
0.4
0.2
1
0.4
0.2
0.1
0.04
0 .02
0.1
0.04
0.02
0.01
0.01
T85HFL.. Se rie s
Tra p e zo id a l Pulse
= 125°C
T85HFL.. Se rie s
Sinu so id a l Pulse
= 125 °C
T
J
T
tp
tp
J
d i/d t = 50A/µs
1E4
1E1
1E2
1E3
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
12
www.irf.com
T..HFL Series
Bulletin I27107 rev. A 09/97
1000
100
10
10000
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
T40HFL.. Serie s
T70HFL.. Se rie s
1
0.5
1
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
7
Insta nta ne ous Fo rwa rd Vo lta ge (V)
Insta nta ne o us Forwa rd Vo lta g e (V)
Fig. 46 - Forward Voltage Drop Characteristics
Fig. 47 - Forward Voltage Drop Characteristics
10000
1000
100
10
T = 25°C
J
T = 125°C
J
T85HFL.. Se rie s
0
1
2
3
4
5
6
7
Insta nta ne ous Fo rwa rd Vo lta g e (V)
Fig. 48 - Forward Voltage Drop Characteristics
1
Ste a dy Sta te Va lue :
T40HFL.. Se rie s
T70HFL.. Se rie s
T85HFL.. Se rie s
R
R
R
= 0.85 K/W
= 0.53 K/W
= 0.46 K/W
thJC
thJC
thJC
0.1
(DC Op e ra tio n)
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 49 - Thermal Impedance ZthJC Characteristics
13
www.irf.com
T85HFL10S02PBF 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
T85HFL10S05 | INFINEON | FAST RECOVERY DIODES | 获取价格 | |
T85HFL10S05 | VISHAY | Fast Recovery Diodes, 40/70/85 A (T-Modules) | 获取价格 | |
T85HFL10S05PBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, D-56, 2 PIN | 获取价格 | |
T85HFL10S10 | INFINEON | FAST RECOVERY DIODES | 获取价格 | |
T85HFL10S10 | VISHAY | Fast Recovery Diodes, 40/70/85 A (T-Modules) | 获取价格 | |
T85HFL10S10PBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, D-56, 2 PIN | 获取价格 | |
T85HFL20S02 | INFINEON | FAST RECOVERY DIODES | 获取价格 | |
T85HFL20S02 | VISHAY | Fast Recovery Diodes, 40/70/85 A (T-Modules) | 获取价格 | |
T85HFL20S02PBF | INFINEON | 暂无描述 | 获取价格 | |
T85HFL20S02PBF | VISHAY | 暂无描述 | 获取价格 |
T85HFL10S02PBF 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6