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元器件品牌
IRF6610
[IRF]
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM; HEXFET功率MOSFET硅技术与先进的DirectFETTM
元器件型号：
IRF6610
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
HEXFET功率MOSFET硅技术与先进的DirectFETTM
晶体 晶体管 功率场效应晶体管 开关 脉冲
PDF文件：
总9页 (文件大小：241K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF6610参数
查看货源
IRF6610TR1PBF
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
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IRF
IRF6610TRPBF
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
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0
IRF
IRF6610TRPBF
Transistor
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156
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0
INFINEON
IRF6611
DirectFET Power MOSFET
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156
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46
IRF
IRF6611PBF
DirectFET Power MOSFET
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156
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23
IRF
IRF6611TRPBF
Power Field-Effect Transistor, 32A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
Warning
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0
INFINEON
IRF6612
HEXFET Power MOSFET
Warning
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36
IRF
IRF6612
HEXFET Power MOSFET
Warning
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156
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47
IRF
IRF66121PBF
RoHs Compliant
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156
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2
IRF
IRF6612PBF
RoHs Compliant
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31
IRF
IRF6612PBF_15
Ideal for CPU Core DC-DC Converters
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156
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0
IRF
IRF6612TR1
HEXFET Power MOSFET
Warning
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156
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22
IRF
IRF6612TR1
HEXFET Power MOSFET
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156
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25
IRF
IRF6612TR1
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-3
Warning
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1
IRF
IRF6612TR1PBF
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
Warning
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on line
156
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0
IRF
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