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IRFSL31N20D [IRF]

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.082ohm ，ID = 31A ）
IRFSL31N20D
元器件型号： IRFSL31N20D
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.082ohm ，ID = 31A ）
PDF文件： 总11页 (文件大小：193K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFSL31N20D参数
 查看货源

IRFSL31N20DPBF

 HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A )

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22 IRF

IRFSL3206PBF

 HEXFET Power MOSFET

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50 IRF

IRFSL3206PBF

 Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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2 INFINEON

IRFSL3207

 HEXFET Power MOSFET

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15 IRF

IRFSL3207

 HEXFET Power MOSFET

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14 IRF

IRFSL3207

 HEXFET Power MOSFET

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16 IRF

IRFSL3207

 HEXFET Power MOSFET

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30 IRF

IRFSL3207PBF

 HEXFET㈢Power MOSFET

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21 IRF

IRFSL3207ZPBF

 HEXFET Power MOSFET

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21 IRF

IRFSL3207ZPBF

 Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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0 INFINEON

IRFSL3306PBF

 High Efficiency Synchronous Rectification in SMPS

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27 IRF

IRFSL3306PBF

 Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

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0 INFINEON

IRFSL3307

 HEXFET Power MOSFET

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45 IRF

IRFSL3307PBF

 Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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0 IRF

IRFSL3307ZPBF

 HEXFET Power MOSFET

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18 IRF
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