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2SA1365G [ISAHAYA]

Transistor;

2SA1365G


元器件型号：	2SA1365G
生产厂家：	ISAHAYA ELECTRONICS CORPORATION
描述和应用：	Transistor 驱动
PDF文件：	总3页 (文件大小：128K)
下载文档：	下载PDF数据表文档文件
型号参数：2SA1365G参数

2SA1365-T12-1E

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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118 ISAHAYA

2SA1366

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN

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3 MITSUBISHI

2SA1366_10

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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14 ISAHAYA

2SA1366-12-1E

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366-12-1F

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366D

Transistor

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0 ISAHAYA

2SA1366E

Transistor

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0 ISAHAYA

2SA1366F

Transistor

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0 ISAHAYA

2SA1366-T12-1D

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366-T12-1E

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1366-T12-1F

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236

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0 MITSUBISHI

2SA1368

High Voltage VCEO = -100V High Collector Current (ICM = -800mA) Small Package For Mounting

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18 TYSEMI

2SA1368

FOR HIGH VOLTAGE DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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31 ISAHAYA

2SA1368

High Voltage Drive Applications

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23 KEXIN

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