首页 > INJ0011AM1

INJ0011AM1

更新时间：2024-09-18 07:29:29

品牌：ISAHAYA

描述：High speed switching Silicon P-channel MOSFET

PDF下载

中文翻译

PCB计价

概述
数据手册

如果您发现信息不准确，欢迎纠错

INJ0011AM1 概述

High speed switching Silicon P-channel MOSFET 高速开关硅P沟道MOSFET

INJ0011AM1 数据手册

通过下载INJ0011AM1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

ＩＮJ0011AＸ SERIES

High speed switching

Silicon P-channel MOSFET

DESCRIPTION

OUTLINE DRAWING

Unit：mm

INJ0011AＸ is a Silicon P-channel MOSFET.

This product is most suitable for low voltage

use such as portable machinery , because of low

voltage drive and low on resistance.

INJ0011AT2(PRELIMINARY)

INJ0011AM1

2.1

0.425 1.25

0.425

0.8

0.2

FEATURE

①

②

・Input impedance is high, and not necessary to

consider a drive electric current.

・Vth is low, and drive by low voltage is possible.

Vth=-1.0～-2.0V

①

②

③

・Low on Resistance.

R^DS(on)=7.0Ω(TYP)＠I_D=-100mA, V_GS=-4.0V

RDS(on)=4.8Ω(TYP)＠I_D=-100mA, V_GS=-10V

・High speed switching.

・Small package for easy mounting.

APPLICATION

High speed switching , Analog switching

JEITA, JEDEC：－

ISAHAYA：T-USM

JEITA：SC-70

JEDEC：－

TERMINAL CONNECTOR

①：GATE

TERMINAL CONNECTOR

①：GATE

②：SOURCE

③：DRAIN

INJ0011AU1

1.6

INJ0011AC1

2.5

EQUIVALENT CIRCUIT

0.4

0.8

0.4

0.5

1.5

0.5

①

②

①

②

③

JEITA：SC-75A

JEDEC：－

JEITA：SC-59

JEDEC：Similar to TO-236

TERMINAL CONNECTOR

①：GATE

T TERMINAL CONNECTOR

①：GATE

②：SOURCE

③：DRAIN

ISAHAYA ELECTRONICS CORPORATION

ＩＮJ0011AＸ SERIES

High speed switching

Silicon P-channel MOSFET

MAXIMUM RATING（Ｔａ＝２５℃）

RATING

INJ0001AU1 INJ0001AM1

SYMBOL

PARAMETER

UNIT

INJ0001AT2

125（※）

INJ0001AC1

Ｖ_DSS

Ｖ_GSS

Drain-source voltage

Gate-source voltage

Drain current

-50

±20

-100

Ｉ

Total

power

dissipation

Ｐ_Ｄ

150

200

（Ta=25℃）

Ｔch

Channel temperature

+125

+150

℃

Ｔｓｔｇ

Range of Storage temperature

-55～+125

-55～+150

ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）

※package mounted on 9mm×19mm×1mm glass-epoxy substrate.

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

UNIT

MIN

-50

TYP

MAX

Drain-source breakdown voltage I _D=-100μA, V _GS=0V

μA

(BR)DSS

Gate-source leak current

Zero gate voltage drain current

Gate threshold voltage

V _GS=±20V, V_DS=0V

_DS=-50V ,V_GS=0V

±10

-1.0

-2.0

GSS

DSS

I _D=-250μA, V _DS= V _GS

-1.0

Forward transfer admittance

V _DS=-10V, I _D=-100mA

I _D=-100mA, V _GS=-4.0V

I _D=-100mA, V _GS=-10V

V _DS=-10V, V _GS=0V,f=1MHz

145

7.0

4.8

| Yfs

Static drain-source on-state

resistance

RDS(ON)

Input capacitance

Ciss

Output capacitance

V _DS=-10V, V _GS=0V,f=1MHz

6.0

Coss

V _DD=-5V , I _D=-10mA

V _GS=0～-5V

Switching time

OFF

Switching time test condition

test circuit

OUT

10%

input

waveform

90%

50Ω

-5V

10μs

DS(ON）

90%

DD=-5V

output

waveform

D.U.≦1%

Common source

Ta=25℃

10%

toff

ton

ISAHAYA ELECTRONICS CORPORATION

TYPICAL CHARACTERISTICS

ID -VDS

Ta=25℃

IID -VDS(Low voltage region)

-1.65V

Ta=25℃

-3.0V

-100

-1

-0.8

-0.6

-0.4

-0.2

-0

-2.8V

-1.7V

-2.9V

-2.7V

-2.6V

-80

-2.5V

-2.4V

-1.6V

-60

-40

-20

-2.3V

-1.55V

VGS=-2.2V

-2.1V

-2.0V

VGS=-1.5V

-1.45V

-1.9V

-1.7V

-1.4V

-0

-5

-10

-0

-0.1

-0.2

-0.3

-0.4

-0.5

Drain-Source voltage VDS (V)

ID -VGS

IDR -VDS

-100

-10

-1

-1000

-100

-10

Ta=25℃

VGS=0V

Ta=25℃

VDS=-10V

-1

0.5

1.5

-0

-1

-2

-3

-4

-5

Drain-Source voltage VDS (V)

Gate-Source voltage VGS (V)

|Yfs| - ID

RDS(ON) - ID

1000

100

Ta=25℃

VDS=-10V

Ta=25℃

VGS=-4V

-10V

-0

-50

-100

-150

-200

-1

-10

-100

-1000

Drain currentꢀID (mA)

t - ID

C - VDS

10000

1000

100

Ta=25℃

toff

Ciss

Coss

ton

Ta=25℃

VGS=0V

0.1

-0.1

-1

-10

-100

-0.1

-1

-10

-100

Drain current ID (mA)

Drain-Source voltage VDS (V)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Feb.2009

INJ0011AM1 相关器件

型号	制造商	描述	价格	文档
INJ0011AT2	ISAHAYA	High speed switching Silicon P-channel MOSFET	获取价格
INJ0011AU1	ISAHAYA	High speed switching Silicon P-channel MOSFET	获取价格
INJ0011AX	ISAHAYA	High speed switching Silicon P-channel MOSFET	获取价格
INK0001AC1	ISAHAYA	Silicon N-channel MOSFET	获取价格
INK0001AM1	ISAHAYA	Silicon N-channel MOSFET	获取价格
INK0001AT2	ISAHAYA	Silicon N-channel MOSFET	获取价格
INK0001AU1	ISAHAYA	Silicon N-channel MOSFET	获取价格
INK0001AX	ISAHAYA	Silicon N-channel MOSFET	获取价格
INK0001AX_08	ISAHAYA	High speed switching Silicon N-channel MOSFET	获取价格
INK0002AC1	ISAHAYA	Silicon N-channel MOSFET	获取价格