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ISA1603AM1_13

更新时间：2024-09-18 12:17:59

品牌：ISAHAYA

描述：FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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ISA1603AM1_13 概述

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE 低频AMPLIFY申请PNP硅外延型

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〈SMALL-SIGNAL TRANSISTOR〉

ISA1530AC1 ISA1603AM1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

UNIT：mm

DESCRIPTION

ISA1530AC1 ISA1603AM1 is super mini

package resin sealed silicon PNP epitaxial type

transistor.

ISA1530AC1

2.8

ISA1603AM1

2.1

0.425 1.25 0.425

These are designed for low frequency voltage

amplify application .

1.5

0.65

FEATURE

①

②

③

・Excellent linearity of DC forward current gain.

・Small collector to emitter saturation voltage

VCE(sat)=-0.3Vmax

APPLICATION

0～0.1

For small type machine low frequency voltage

amplify application.

JEITA：SC-59

JEITA：SC-70

JEDEC：－

JEDEC：Similar to TO-236

TERMINAL CONNECTOR

①：BASE

TERMINAL CONNECTOR

①：BASE

②：EMITTER

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

Ratings

Symbol

Parameter

UNIT

MARKING

ISA1530AC1 ISA1603AM1

Ｖ_ＣＢＯ

Ｖ_ＥＢＯ

Ｖ_ＣＥＯ

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

-60

-6

-50

Ｉ

-150

℃

Ｃ

Ｐ_Ｃ

Ｔｊ

Collector dissipation

200

Junction temperature

Storage temperature

+150

Ｔｓｔｇ

-55～+150

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Symbol

Parameter

Test conditions

UNIT

Min

-50

－

Ave

－

Max

－

Ｖ_{（ＢＲ）ＣＥＯ}

I =-100μA，R_BE=∞

μA

－

Collector to Emitter Breakdown voltage

Collector cut off current

Ｉ

V_CB=-60V，I _E=0

－

-0.1

560

－

ＣＢＯ

Ｉ

Emitter cut off current

V_EB=-4V，I _C=0

－

EＢＯ

V_CE=-6V，I _C=-1mA

V_CE=-6V，I _C=-0.1mA

120

－

DC forward current gain

ｈ_ＦＥ*

ｈ_ＦＥ

－

DC forward current gain

Ｖ_{ＣＥ（ｓａｔ）}

ｆ_Ｔ

_C=-100mA，I _B=-10mA

－

-0.3

－

Collector to Emitter saturation voltage

Gain bandwidth product

V_CE=-6V，I _E=10mA

V_CB=-6V，I _E=0,f=1MHz

V_CE=-6V，I _E=0.3mA

f=100Hz，RG=10kΩ

－

200

4.0

MHz

Cob

－

Collector output capacitance

Noise figure

－

*：It shows hFE classification in below table.

ｈFE

120～270

180～390

270～560

ISAHAYA ELECTRONICS CORPORATION

〈SMALL-SIGNAL TRANSISTOR〉

ISA1530AC1 ISA1603AM1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

TYPICAL CHARACTERISTICS

COMMON EMITTER OUTPUT

COLLECTOR DISSIPATION

VS AMBIENT TEMPERATURE

-50

250

200

150

100

IB=-0.18mA

IB=-0.2mA

IB=-0.14mA

IB=-0.12mA

IB=-0.10mA

IB=-0.08mA

IB=-0.16mA

-40

-30

-20

-10

-0

IB=-0.06mA

IB=-0.04mA

IB=-0.02mA

IB=0mA

100

150

-0

-1

-2

-3

-4

-5

AMBIENT TEMPERATURE Ta(℃)

COLLECTOR・EMITTER VOLTAGE VCE(V)

COLLECTOR TO EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

BASE TO EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

-1000

-100

-10

-10.0

-1.0

-0.1

IC/IB=10

Ta=100℃

Ta=25℃

Ta=25℃ Ta=-40℃

Ta=100℃

Ta=-40℃

-0.1

-1

-10

-100

-1000

-0.1

-1

-10

-100

-1000

COLLECTOR CURRENT IC(mA)

COMMON EMITTER TRANSFER

COLLECTOR CURRENT IC(mA)

COMMON EMITTER TRANSFER

-1

-0.8

-0.6

-0.4

-0.2

-0

-100

VCE=-6V

-80

-60

-40

-20

-0

Ta=100℃

Ta=25℃

Ta=-40℃

-0

-0.2

-0.4

-0.6

-0.8

-1

-0

-0.2

-0.4

-0.6

-0.8

-1

BASE TO EMITTER VOLTAGE VBE(V)

ISAHAYA ELECTRONICS CORPORATION

〈SMALL-SIGNAL TRANSISTOR〉

ISA1530AC1 ISA1603AM1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

DC FORWARD CURRENT GAIN

VS COLLECTOR CURRENT

GAIN BAND WIDTH PRODUCT

VS. EMITTER CURRENT

-10000

-1000

-100

400

VCE=-6V

Ta=-40℃ Ta=25℃ Ta=100℃

300

200

100

-10

0.1

100

-0.1

-1

-10

-100

-1000

EMITTER CURRENT IE[mA]

COLLECTOR CURRENT IC(mA)

COLLECTOR OUTPUT CAPACITANCE

VS COLLECTOR TO BASE VOLTAGE

EMITTER INPUT CAPACITANCE

VS EMITTER TO BASE VOLTAGE

100

Ta=25℃

f=1MHz

Cib

Cob

0.1

100

COLLECTOR TO BASE VOLTAGE VCB(V)

EMITTER TO BASE VOLTAGE VEB(V)

ISAHAYA ELECTRONICS CORPORATION

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jun.2013

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