ISA2188AU1
更新时间:2024-09-18 12:38:26
品牌:ISAHAYA
描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
ISA2188AU1 概述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE 对于一般用途的高电流驱动应用PNP硅外延型
ISA2188AU1 数据手册
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PRELIMINARY
※This datasheet is possibility of change.
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Because this device is developing now.
SILICON PNP EPITAXIAL TYPE
Unit:mm
OUTLINE DRAWING
DESCRIPTION
1.5
0.8
ISA2188AU1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low VCE(sat).
0.35
0.35
①
②
FEATURE
③
●High collector current
IC(MAX)=-650mA
●Low collector to emitter saturation voltage
VCE(sat)<-0.7Vmax
APPLICATION
TERMINAL CONNECTOR
①:BASE
②:EMITTER
For switching application, small type motor drive application.
JEITA:SC-75A
JEDEC: -
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
MARKING
Symbol
VCEO
VCBO
VEBO
ICM
Parameter
Ratings
-20
Unit
V
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Peak collector current
Collector current
hFE ITEM
Type Name
-25
V
-4
V
-1000
-650
150
mA
mA
mW
℃
℃
・ A F
IC
PC
Collector dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
-55~150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Typ
-
Symbol
Parameter
Test condition
Unit
Max
Min
-20
-25
-4
V(BR)CEO C to E break down voltage
V(BR)CBO C to B break down voltage
V(BR)EBO E to B break down voltage
IC=-100uA, IB=0
-
-
V
V
IC=-10uA, IE=0
-
IE=-10uA, IC=0
-
-
V
ICBO
IEBO
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
VCB=-25V, IE=0
-
-
-1
uA
uA
-
V
VEB=-2V, IC=0
-
-
-1
hFE※
VCE(sat)
fT
IC=-100mA, VCE=-4V
IC=-500mA, IB=-25mA
IE=10mA, VCE=-6V,f=100MHz
150
-
-
800
-0.7
-
-0.3
210
-
MHz
*:It shows hFE classification in below table.
ITEM
hFE
E
F
G
150~300 250~500 400~800
ISAHAYA ELECTRONICS CORPORATION
ISA2188AU1
PRELIMINARY
※This datasheet is possibility of change.
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Because this device is developing now.
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
COLLECTOR TO EMITTER SATURATIONVOLTAGEVS.
COLLECTOR CURRENT
-1000
200
150
100
50
IC/IB=20
-100
25℃
85℃
-40℃
-10
0
-1
0
50
100
150
-1
-10
-100
-1000
AMBIENT TEMPERATURE Ta(℃)
COLLECTOR CURRENTIC(mA)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
COMMON EMITTER TRANSFER
-1000
-100
-10
10000
1000
100
VCE=-4V
VCE=-4V
25℃
85℃
25℃
85℃
-40℃
-1
-40℃
-0.1
-0.01
10
-0.1
-1
-10
-0.1
-1
-10
-100
-1000
BASETO EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENTIC (mA)
COMMON EMITTER OUTPUT(1)
COMMON EMITTER OUTPUT(2)
Ta=25℃
-800
-600
-400
-200
-0
-200
-160
-120
-80
-8mA
-7mA
-6mA
-5mA
-0.6mA
-9mA
-0.5mA
-0.3mA
-10mA
-4mA
-0.4mA
-3mA
-2mA
-0.2mA
-0.1mA
-1mA
-40
Pc=150mW
IB=0mA
Pc=150mW
IB=0mA
-0
-0
-1
-2
-3
-4
-5
-0
-5
-10
-15
-20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION
ISA2188AU1
PRELIMINARY
※This datasheet is possibility of change.
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Because this device is developing now.
SILICON PNP EPITAXIAL TYPE
GAIN BANDWIDTH PRODUCTVS. EMITTER CURRENT
500
400
300
200
100
0
Ta=25℃
VCE=-6V
1
10
100
1000
EMITTER CURRENT IE(mA)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Apr.2013
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