RT1P240U
更新时间:2024-09-18 06:20:29
品牌:ISAHAYA
描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
RT1P240U 概述
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type 晶体管,电阻器,用于切换应用NPN硅外延型 其他晶体管
RT1P240U 规格参数
生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
Base Number Matches: | 1 |
RT1P240U 数据手册
通过下载RT1P240U数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载〈Transistor〉
RT1P240X SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
OUTLINE DRAWING ꢀꢀꢀꢀꢀꢀꢀUNIT:mm
RT1P240X is a one chip transistor
RT1P240U
RT1P240C
with built-in bias resistor,NPN type is RT1N240X.
1.6
0.8
2.5
0.4
0.4
0.5
1.5
0.5
FEATURE
・Built-inbiasresistor(R1=22kΩ).
①
②
①
②
③
③
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
Equivalent circuit
C
JEITA:-
JEDEC:-
ꢀꢀꢀJEITA:SC-59
(OUT)
R1
JEDEC:SimilartoTO-236
B
Terminal Connector
①:Base
Terminal Connector
①:Base
(IN)
②:Emitter
③:Collector
②:Emitter
③:Collector
E
(GND)
RT1P240M
RT1P240S
4.0
2.1
0.425 1.25 0.425
0.1
①
0.45
②
③
1.27 1.27
①
②
③
JEITA:SC-70
JEDEC:-
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
Terminal Connector
①:Emitter
②:Collector
③:Base
③:Collector
ISAHAYAꢀELECTRONICSꢀCORPORATION
〈Transistor〉
RT1P240X SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
UNIT
RT1P240U
RT1P240M
RT1P240C
RT1P240S
V
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
-50
-6
V
V
CBO
V
EBO
V
-50
-100
-200
200
V
CEO
I
mA
mA
ꢀC
I
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
ꢀCM
P
150
+150
450
mW
C
Tj
+150
℃
℃
Tstg
Storage temperature
-55~+150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
MAX
-0.1
V
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
I =-100μA,RBE=∞
ꢀC
-50
100
15
V
(BR)CEO
I
VCB=-50V,I =0
ꢀE
μA
-
ꢀCBO
h
VCE=-5V,I =-1mA
ꢀC
FE
V
I =-10mA,I =-0.5mA
ꢀB
-0.3
29
V
CE(sat)
ꢀC
R
22
kΩ
MHz
1
f
T
Gain band width product
VCE=-6V,I =10mA
ꢀE
150
DC forward current gain-collector voltage
Input on voltage - collector voltage
-10
1000
100
10
VCE=-0.2V
VCE=-5V
-1
-0.1
-0.1
-1
-10
-100
-0.1
-1
-10
-100
collector voltageꢀIc (mA)
collector voltageꢀIc(mA)
collector voltage-Input off voltage
-1000
-100
-10
VCE=-5V
-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2
Input off voltageꢀVI(OFF)(V)
ISAHAYAꢀELECTRONICSꢀCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
·hISeAreHinA.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
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·Imf athteersiaelsp.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is
·Pprleoahsibeitecdo.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
RT1P240U 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
RT1P240X | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P241C | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P241M | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P241M | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN | 获取价格 | |
RT1P241S | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P241S | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI PACKAGE-3 | 获取价格 | |
RT1P241U | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P241X | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P242C | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 | |
RT1P242M | ISAHAYA | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type | 获取价格 |
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