RT2N04M [ISAHAYA]

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE; 复合晶体管，电阻，开关应用硅NPN外延型


型号：	RT2N04M
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE 复合晶体管，电阻，开关应用硅NPN外延型晶体开关晶体管
文件：	总3页 (文件大小：57K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

R T2N 04M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2N04M isa compoｓｉｔｅ transistorwithbuilt-inbiasresistor

1.25

FEATURE

●Built-in bias resistor ( R1=22 KΩ, R2=22K Ω )

①

②

③

⑤

④

●Mini package for easy mounting

APPLICATION

Inverted circuit , switching circuit , interface circuit , driver circuit

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

RTr1

RTr2

④：COLLECTOR２

⑤：COLLECTOR１

JEITA：－

JEDEC：－

①

②

③

MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

100

℃

I _CM

P_C

Peak Collector current

200

Collector dissipation（Total Ta=25℃）

Junction temperature

Storage temperature

150

①

② ③

T_j

＋150

-55～＋150

T_stg

ISAHAYA ELECTRONICS CORPORATION

R T2N 04M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON NPN EPITAXIAL TYPE

ELECTRICAL CHARACTERISTICS （Ta=25℃）（RTr1、RTr2）

Limits

Symbol

V_(BR)CEO

Parameter

Testconditions

Unit

Min

Typ

Max

Collector to Emitter break down voltage

Collector cut off current

DC forwardcurrentgain

Collectorto Emittersaturationvoltage

Input on voltage

I _C=100μA，R_BE=∞

V_CB=50V，I_E=0mA

V_CE=5V，I_C=5mA

μA

CBO

0.1

h_FE

V_CE(sat)

V_I(ON)

V_I(OFF)

R₁

I _C=10mA，I_B=0.5mA

V_CE=0.2V，I_C=5mA

V_CE=5V，I_C=100μA

0.1

1.8

1.1

1.0

200

0.3

3.0

Input off voltage

0.8

0.9

Input resistor

1.1

KΩ

R₂/R₁

Resistor ratio

Gain band width product

V_CE=6V，I_E=-10mA

MHz

TYP IC IA LꢀC H A R A C TER ISTIC Sꢀ（Tr1、Tr2）

Input on voltage-collector current

DC forward gain current-collector current

1000

RT1N241

現行RT1N241

100

RT1N241

現行RT1N241

0.1

100

collector currentꢀＩＣ（ｍＡ）

colector curentꢀＩＣ（ｍＡ）

collector current - Input on voltage

1000

100

RT1N241

現行RT1N241

0.0

0.4

0.8

1.2

1.6

2.0

Input off voltageꢀＶＩ（ＯＦＦ）（Ｖ）

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT2N04M [ISAHAYA]

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