RT3C99M [ISAHAYA]
Composite Transistor; 复合晶体管
| 型号： | RT3C99M |
| 厂家： | 
ISAHAYA ELECTRONICS CORPORATION |
| 描述： | Composite Transistor |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
Unit：mm
RT3C99M is a composite transistor built with two
2.1
2SC5938A chips in SC-88 package.
1.25
FEATURE
①
②
③
⑥
Silicon NPN epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
⑤
④
APPLICATION
muting circuit、switching circuit
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
Tr1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
Tr2
⑥:COLLECTOR1
JEITA：SC-88
MARKING
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
RATING
50
UNIT
V
6
5
4
V
CBO
V
EBO
V
CEO
40
V
20
V
C９９
200
mA
mW
℃
I
C
.
Collector dissipation（Ta=25℃）
Junction temperature
150
P （Total）
C
１
2
3
＋125
-55～＋125
T
T
j
℃
Storage temperature
stg
ISAHAYA ELECTRONICS CORPORATION
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Limits
Symbol
Parameter
Test conditions
Unit
Min
Typ
-
Max
μA
μA
-
Collector cut off current
-
0.1
I
I
V
V
V
=50V,I =0
CBO
CB
EB
CE
E
Emitter cut off current
-
-
0.1
=40V,IC=0
EBO
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Output On-resistance
200
-
1200
h
=2V,I =4mA
C
FE*
-
-
-
-
30
30
5.0
0.95
-
-
-
-
V
V
I =30mA,I =3mA
C B
CE(sat)
f
V
CE
=6V,I =-4mA
MH
pF
Ω
T
E
Z
C
V
CB
=10V,I =0,f=1MH
E
ob
Z
Ron
I =5mA, f=1MHz
B
* : It shows hFE classification in right table.
Item
hFE
A
B
350～1200
200～700
TYPICAL CHARACTERISTICS (Tr1、Tr2)
COMMON EMITTER TRANSFER
COMMON EMITTER OUTPUT
60
50
40
30
20
10
0
Ta=25℃
VCE=2V
Ta=25℃
50
300μA
250μA
40
30
20
10
0
200μA
150μA
100μA
IB=50μA
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE VBE(V)
COLLECTOR TO EMITTER VOLTAGEꢀVCE(V)
ISAHAYA ELECTRONICS CORPORATION
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
10000
1000
100
10000
1000
100
Ta=25℃
VCE=-2V
Ta=25℃
VCE=2V
10
10
-0.1
-1
-10
-100
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
ON RESISTANCE VS. BASE CURRENT
10
1000
Ta=25℃
Ta=25℃
IC/IB=10
100
1
10
1
0.1
0.1
0.1
1
10
100
0.1
1
10
100
1000
BASE CURRENT IB(mA)
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS.COLLECTOR TO BASE VOLTAGE
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
100
100
10
1
Ta=25℃
Ta=25℃
VCE=6V
IE=0
f=1MHz
10
0.1
1
10
100
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE VCB(V)
EMITTER CURRENT IE(mA)
ISAHAYA ELECTRONICS CORPORATION
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