RT3T11M [ISAHAYA]

Composite Transistor With Resistor; 复合晶体管，电阻


型号：	RT3T11M
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	Composite Transistor With Resistor 复合晶体管，电阻晶体晶体管
文件：	总4页 (文件大小：63K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY

RT3T11M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3T11M is a composite transistor built with RT1N141

chip and RT1P141 chip in SC-88 package.

2.1

1.25

FEATURE

①

⑥

Silicon epitaxial type

②

③

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

⑥

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

RTr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25

℃)

SYMBOL

V_CBO

V_EBO

V_CEO

I_C

PARAMETER

RATING

UNIT

MARKING

Collector to Base voltage

Emitter to Base voltage

⑥ ⑤ ④

Collector to Emitter voltage

Collector current

100

℃

T 1 1

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

200

I_CM

150

P_C

＋150

-55～＋150

T_j

① ② ③

℃

Storage temperature

T_stg

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

RT3T11M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Limits

Symbol

Parameter

Test conditions

Unit

Min

Typ

Max

Collector to Emitter break down voltage

Collector cut off current

DC forward current gain

Collector to Emitter saturation voltage

Input on voltage

μA

I_C=100μA,R_BE=∞

V_CB=50V,I_E=0

V_CE=5V,I_C=10mA

I_C=10mA,I_B=0.5mA

V_CE=0.2V,I_C=5mA

V_CE=5V,I_C=100μA

V_(BR)CEO

I_CBO

0.1

h_FE

0.1

1.5

1.1

1.0

150

0.3

3.0

V_CE(sat)

V_I(ON)

V_I(OFF)

R₁

Input off voltage

0.8

kΩ

Input resistor

1.1

Resistor ratio

0.9

R₂/R₁

f_T

Gain band width product

V_CE=6V,I_E=-10mA

MH_Z

TYPICAL CHARACTERISTICS ( Tr1 )

INPUT ON VOLTAGE

DC FORWARD CURRENT GAIN

VS. COLLECTOR CURRENT

100

1000

VCE=0.2V

VCE=5V

100

COLLECTOR CURRENTꢀIC(mA)

COLLECTOR CURRENT IC(mA)

COLLECTOR CURRENT

VS. INPUT OFF VOLTAGE

1000

100

VCE=5V

0.0

0.4

0.8

1.2

1.6

2.0

INPUT OFF VOLTAGEꢀVI(OFF)(V)

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

RT3T11M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

TYPICAL CHARACTERISTICS ( Tr2 )

INPUT ON VOLTAGE

VS. COLLECTOR CURRENT

100

DC FORWARD CURRENT GAIN

VS. COLLECTOR CURRENT

1000

100

VCE=-0.2V

VCE=-5V

-1

-10

COLLECTOR CURRENTꢀIC(mA)

-100

-1

-10

-100

COLLECTOR CURRENT IC(mA)

COLLECTOR CURRENT

VS. INPUT OFF VOLTAGE

-1000

-100

-10

VCE=-5V

0.0

0.4

0.8

1.2

1.6

2.0

INPUT OFF VOLTAGEꢀVI(OFF)(V)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT3T11M [ISAHAYA]

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