2SC3440_10 [ISAHAYA]

HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE; 高电流驱动应用硅NPN外延型
2SC3440_10
元器件型号: 2SC3440_10
生产厂家: ISAHAYA ELECTRONICS CORPORATION    ISAHAYA ELECTRONICS CORPORATION
描述和应用:

HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
高电流驱动应用硅NPN外延型

驱动
PDF文件: 总3页 (文件大小:131K)
下载文档:  下载PDF数据表文档文件
型号参数:2SC3440_10参数

2SC3440-12-1E

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

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0 MITSUBISHI

2SC3440-12-1F

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

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0 MITSUBISHI

2SC3440-12-1G

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

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0 MITSUBISHI

2SC3440E

Transistor

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0 ISAHAYA

2SC3440F

Transistor

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0 ISAHAYA

2SC3440F

Transistor

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1 ISAHAYA

2SC3440G

Transistor

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2 ISAHAYA

2SC3440G

Transistor

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2 ISAHAYA

2SC3440-T12-1F

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

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0 MITSUBISHI

2SC3441

SILICON NPN EPTAXIAL TRANSISTOR

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117 ISAHAYA

2SC3441_10

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

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21 ISAHAYA

2SC3443

High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.

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17 TYSEMI

2SC3443

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

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72 ISAHAYA

2SC3443

Small Signal Transistor

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34 KEXIN

2SC3443

Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

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2 MITSUBISHI