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元器件品牌
2SJ125
[ISAHAYA]
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE; 低频AMPLIFY应用P沟道结型
元器件型号：
2SJ125
生产厂家：
ISAHAYA ELECTRONICS CORPORATION
描述和应用：
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
低频AMPLIFY应用P沟道结型
晶体 小信号场效应晶体管 开关 光电二极管
PDF文件：
总4页 (文件大小：217K)
下载文档：
下载PDF数据表文档文件
型号参数：2SJ125参数
查看货源
2SJ125_10
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
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7
ISAHAYA
2SJ125-12-1C
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
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0
MITSUBISHI
2SJ125-12-1D
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
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156
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0
MITSUBISHI
2SJ125C
P-CHANNEL, Si, SMALL SIGNAL, JFET, SC-59, SIMILAR TO TO-236, 3 PIN
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1
ISAHAYA
2SJ125D
P-CHANNEL, Si, SMALL SIGNAL, JFET, SC-59, SIMILAR TO TO-236, 3 PIN
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0
ISAHAYA
2SJ125-T12-1C
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
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-
0
MITSUBISHI
2SJ125-T12-1D
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
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0
MITSUBISHI
2SJ126
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB
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55
ETC
2SJ127
TRANSISTOR | MOSFET | P-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB
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156
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165
ETC
2SJ127
10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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156
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3
RENESAS
2SJ128
MOS Field Effect Power Transistors
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156
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135
ETC
2SJ128(0)-Z-AZ
2SJ128(0)-Z-AZ
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156
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1
RENESAS
2SJ128Z
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252
Warning
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156
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75
ETC
2SJ128-Z
Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN
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0
NEC
2SJ128-Z
2A, 100V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, MP-3, SC-63, 3 PIN
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1
RENESAS
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