2N5655 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5655 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
DESCRIPTION
·
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALU
275
325
375
250
300
350
6
UNIT
2N5655
2N5656
2N5657
2N5655
2N5656
2N5657
VCBO
Collector-base voltage
Open emitter
Open base
V
VCEO
Collector-emitter voltage
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
0.5
Collector current-Peak
Base current
1.0
A
0.25
20
A
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
6.25
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
250
300
350
TYP.
MAX
UNIT
2N5655
2N5656
2N5657
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A; IB=0;L=50mH
V
VCEsat-1
VCEsat-2
VCEsat-3
VBE
Collector-emitter saturation voltage IC=100mA ;IB=10mA
Collector-emitter saturation voltage IC=250mA ;IB=25mA
Collector-emitter saturation voltage IC=500mA ;IB=100mA
1.0
2.5
10
V
V
V
V
Base-emitter on voltage
IC=100mA ; VCE=10V
VCE=150V; IB=0
VCE=200V; IB=0
VCE=250V; IB=0
VCB=275V; IE=0
VCB=325V; IE=0
VCB=375V; IE=0
1.0
2N5655
2N5656
2N5657
2N5655
2N5656
2N5657
ICEO
Collector cut-off current
0.1
10
mA
ICBO
Collector cut-off current
μA
VCE= Rated VCEO; VBE(off)=1.5V
TC=100℃
0.1
1.0
ICEX
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
Collector cut-off current
Emitter cut-off current
DC current gain
mA
VEB=6V; IC=0
10
μA
IC=50mA ; VCE=10V
IC=100mA ; VCE=10V
IC=250mA ; VCE=10V
IC=500mA ; VCE=10V
IC=50mA ; VCE=10V;f=10MHz
f=100kHz ; VCB=10V;IE=0
25
30
15
5
DC current gain
250
DC current gain
DC current gain
Transition frequency
Output capacitance
10
MHz
pF
COB
25
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5655 2N5656 2N5657
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
2N5655LEADFREE
Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL
2N5656LEADFREE
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL
©2020 ICPDF网 联系我们和版权申明