2N5838 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N5838
型号: 2N5838
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5838 2N5839 2N5840  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High breakdown voltage  
APPLICATIONS  
·For use in switching power supply and  
other inductive switching circuits.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBO
PARAMETER  
CONDITIONS  
VALU
275  
300  
375  
250  
275  
350  
6
UNIT  
2N5838  
2N5839  
2N5840  
2N5838  
2N5839  
2N5840  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
3
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
150  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.25  
/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5838 2N5839 2N5840  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
250  
275  
350  
TYP.  
MAX  
UNIT  
2N5838  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A ;IB=0  
V
2N5839  
2N5840  
VCEsat  
VBEsat  
ICBO  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
IC=2A; IB=0.4A  
0.8  
1.5  
1.0  
1.0  
1.0  
0  
V
IC=2A; IB=0.4A  
V
VCB=Rated VCBO; IE=0  
VCE= Rated VCEO; VBE(off)=1.5V  
VEB=5V; IC=0  
mA  
mA  
mA  
ICEV  
Collector cut-off current  
IEBO  
Emitter cut-off current  
2N5838  
IC=3A ; VCE=3V  
8
10  
5
hFE  
DC current gain  
2N5839/5840 IC=2A ; VCE=3V  
50  
fT  
Transition frequency  
IC=1A ; VCE=10V;f=1.0MHz  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5838 2N5839 2N5840  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)  
3

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