2N6383 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6383 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
DESCRIPTION
·With TO-3 package
·Complement to type 2N6648/6649/6650
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
40
UNIT
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
VCBO
Collector-base voltage
Open emitter
V
60
80
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
10
Collector current-peak
Base current
15
A
0.25
100
200
-65~200
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
1.75
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N6383
2N6384
2N6385
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
60
80
VCEsat-1
VCEsat-2
VBE-1
Collector-emitter saturation voltage IC=5A; IB=10mA
Collector-emitter saturation voltage IC=10A ;IB=100mA
2.0
3.0
2.8
4.5
V
V
V
V
Base-emitter on voltage
Base-emitter on voltage
IC=5A ; VCE=3V
IC=10A ; VCE=3V
VCE=40V; IB=0
VCE=60V; IB=0
VCE=80V; IB=0
VBE-2
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
ICEO
Collector cut-off current
Collector cut-off current
1.0
mA
VCE=40V; VBE=-1.5V
0.3
3.0
TC=125℃
VCE=60V; VBE=-1.5V
0.3
3.0
ICEX
mA
mA
TC=125℃
VCE=80V; VBE=-1.5V
0.3
3.0
TC=125℃
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=5V; IC=0
10
IC=5A ; VCE=3V
1000
100
20000
DC current gain
IC=10A ; VCE=3V
Output capacitance
IE=0; VCB=10V;f=1MHz
200
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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