概述
规格参数
数据手册2SB1187 概述
Silicon PNP Power Transistors 硅PNP功率晶体管 其他晶体管
2SB1187 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.61 |
| Is Samacsys： | N | Base Number Matches： | 1 |
2SB1187 数据手册
通过下载2SB1187数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1187
DESCRIPTION
·
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1761
·Excellent DC current gain characteristics
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
2
Collector
Base
3
Absolue maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
-80
UNIT
V
V
V
A
A
Open base
-60
Open collector
-5
Collector current (DC)
Collector current-Peak
-3
ICM
-6
TC=25℃
Ta=25℃
30
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1187
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
-60
-80
-5
TYP.
MAX
UNIT
V
IC=-1mA , IB=0
IC=-50μA , IE=0
IE=-50μA , IC=0
IC=-2A ;IB=-0.2A
IC=-2A ;IB=-0.2A
VCB=-60V ;IE=0
V
V
-1.0
-1.5
-10
V
V
μA
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
hFE
DC current gain
IC=-0.5A ; VCE=-5V
IC=-0.5A ; VCE=-5V
IE=0 ; VCB=-10V ,f=1MHz
60
320
fT
Transition frequency
12
MHz
pF
Cob
Output capacitance
100
2
Inchange Semiconductor
Product Specification
Silicon Power Transistors
2SB1187
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SB1187 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SB1187D | ROHM | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN | 获取价格 |
|
| 2SB1187E | ROHM | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN | 获取价格 |
|
| 2SB1187F | ROHM | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN | 获取价格 |
|
| 2SB1187_15 | JMNIC | Silicon PNP Power Transistors | 获取价格 |
|
| 2SB1187_2014 | JMNIC | Silicon PNP Power Transistors | 获取价格 |
|
| 2SB1188 | ROHM | Medium power Transistor(-32V, -2A) | 获取价格 |
|
| 2SB1188 | WEITRON | Epitaxial Planar PNP Transistors | 获取价格 |
|
| 2SB1188 | TRSYS | Plastic-Encapsulated Transistors | 获取价格 |
|
| 2SB1188 | KEXIN | Medium Power Transistor | 获取价格 |
|
| 2SB1188 | SECOS | PNP Silicon Medium Power Transistor | 获取价格 |
|
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