2SC2137

更新时间:2024-10-20 07:59:59
品牌:ISC
描述:isc Silicon NPN Power Transistor

2SC2137 概述

isc Silicon NPN Power Transistor ISC的硅NPN功率晶体管 其他晶体管

2SC2137 规格参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SC2137 数据手册

通过下载2SC2137数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2137  
DESCRIPTION  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 400V (Min)  
·High Switching Speed  
APPLICATIONS  
·Switching regulator and high voltage switching applications.  
·High speed DC-DC converter applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
MAX  
500  
400  
6
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
7
A
IB  
2
A
Collector Power Dissipation  
@TC=25  
PC  
80  
W
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2137  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
PARAMETER  
CONDITIONS  
MIN  
400  
500  
6
TYP.  
MAX  
UNIT  
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0  
V
V
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Gain  
IC= 1mA; IE= 0  
IE= 1mA; IC= 0  
IC= 3A; IB= 0.3A  
IC= 3A; IB= 0.3A  
IC= 3A; VCE= 5V  
VCB= 400V; IE=
VEB= 6V; IC= 0  
1.5  
2.0  
VCE  
(sat)  
VBE  
(sat)  
hFE  
10  
ICBO  
Collector Cutoff Current  
0.1  
1.0  
mA  
mA  
IEBO  
Emitter Cutoff Current  
Switching Times  
Rise Time  
1.0  
2.0  
1.0  
μs  
μs  
μs  
tr  
tstg  
tf  
VCC= 200V; IB1= -IB2= 0.3A;  
RL= 40Ω  
Storage Time  
Fall Time  
isc Websitewww.iscsemi.cn  

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