2SC2416 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC2416 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2416
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
500
UNIT
V
400
V
7
V
Collector Current-Continuous
10
A
Collector Power Dissipation
@TC=25℃
PC
120
W
℃
℃
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2416
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH
400
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 5A; IB= 1A
IC= 5A; IB= 1A
VCB= 500V;IE= 0
VEB= 5V; IC= 0
1.0
1.5
0.1
0.1
V
V
VCE
VBE
(sat)
(sat)
ICBO
mA
mA
IEBO
Emitter Cutoff Current
hFE-1
hFE-2
fT
DC Current Gain
IC= 0.1A ; VCE= 5V
IC= 5A ; VCE= 5V
IC= 0.5A; VCE= 10V
15
8
DC Current Gain
Current-Gain—Bandwidth Product
11
MHz
Switching Times
Turn-On Time
1
3
1
μs
μs
μs
ton
tstg
tf
IC= 5A ;IB1= -IB2= 1A
Storage Time
Fall Time
isc Website：www.iscsemi.cn
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