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2SC3371

更新时间：2025-07-09 07:59:59
品牌：ISC
描述：Silicon NPN Power Transistor

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中文翻译

免费 PCB/SMT

2SC3371 概述

Silicon NPN Power Transistor 硅NPN功率晶体管

2SC3371 数据手册

通过下载2SC3371数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3371  
DESCRIPTION  
·
·Collector-Emiiter Sustaining Voltage-  
: VCEO(SUS)= 500V(Min.)  
·Low Collector Saturation Voltage  
: VCE(sat)= 1.0V(Max.)@ IC= 8A  
·High Speed Switching  
APPLICATIONS  
·Designed for power switching applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
800  
500  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
15  
A
ICM  
30  
A
IB  
5
A
Collector Power Dissipation  
@TC=25℃  
PC  
200  
150  
-55~150  
W
℃
℃
Tj  
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3371  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP. MAX UNIT  
IC= 0.5A; L= 25mH  
500  
V
IC= 8A; IB= 1.6A  
IC= 8A; IB= 1.6A  
VCB= 800V; IE= 0  
VEB= 5V; IC= 0  
1.0  
1.5  
0.1  
0.1  
V
V
)
sat  
VBE(  
)
sat  
ICBO  
mA  
mA  
IEBO  
hFE-1  
hFE-2  
Emitter Cutoff Current  
DC Current Gain  
IC= 0.1A; VCE= 5V  
IC= 8A; VCE= 5V  
15  
10  
DC Current Gain  
Switching Times; Resistive Load  
Turn-on Time  
Storage Time  
Fall Time  
1.0  
3.0  
1.0  
μs  
μs  
μs  
ton  
IC= 8A; IB1= -IB2= 1.6A;  
VCC= 200V  
ts  
tf  
isc Website：www.iscsemi.cn  

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