2SC3371 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC3371 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3371
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 8A
·High Speed Switching
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
800
500
7
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
15
A
ICM
30
A
IB
5
A
Collector Power Dissipation
@TC=25℃
PC
200
150
-55~150
W
℃
℃
Tj
Junction Temperature
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3371
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
IC= 0.5A; L= 25mH
500
V
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A
VCB= 800V; IE= 0
VEB= 5V; IC= 0
1.0
1.5
0.1
0.1
V
V
)
sat
VBE(
)
sat
ICBO
mA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
DC Current Gain
IC= 0.1A; VCE= 5V
IC= 8A; VCE= 5V
15
10
DC Current Gain
Switching Times; Resistive Load
Turn-on Time
Storage Time
Fall Time
1.0
3.0
1.0
μs
μs
μs
ton
IC= 8A; IB1= -IB2= 1.6A;
VCC= 200V
ts
tf
isc Website：www.iscsemi.cn
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