2SC3907 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3907 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3907
DESCRIPTION
·
·With TO-3P(I) package
·Complement to type 2SA1516
APPLICATIONS
·Audio and general purpose power
amplifier applications
·Recommend for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
180
UNIT
V
Open base
180
V
Open collector
5
V
12
A
IB
Base current
1.2
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
130
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3907
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA; IB=0
180
IC=8 A;IB=0.8 A
IC=7A ; VCE=5V
VCB=180V; IE=0
VEB=5V; IC=0
0.3
1.0
2.0
1.5
5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
5
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=7A ; VCE=5V
IC=1A ; VCE=5V
IE=0; VCB=10V;f=1MHz
55
35
180
DC current gain
Transition frequency
30
MHz
pF
COB
Output capacitance
270
hFE-1 classifications
R
O
55-110
90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3907
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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