2SC4426 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
2SC4426
型号: 2SC4426
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总2页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4426  
DESCRIPTION  
·High Breakdown Voltage-  
: V(BR)CEO= 800V(Min)  
·Fast Switching speed  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for switching regulator Applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1100  
800  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Pulse  
Base Current-Continuous  
3
A
ICP  
10  
A
IB  
1.5  
A
Collector Power Dissipation  
@ TC=25℃  
45  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
3
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4426  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCE(  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
800  
1100  
7
TYP.  
MAX  
UNIT  
V
IC= 5mA; RBE= ∞  
IC= 1mA; IE= 0  
V
IE= 1mA; IC=0  
V
IC= 1.5A; IB= 0.3A  
IC= 1.5A; IB= 0.3A  
VCB= 800V; IE= 0  
VEB= 5V; IC= 0  
2.0  
1.5  
10  
V
)
sat  
V
VBE(  
)
sat  
ICBO  
μA  
μA  
IEBO  
hFE-1  
hFE-2  
COB  
fT  
Emitter Cutoff Current  
10  
DC Current Gain  
IC= 0.2A; VCE= 5V  
IC= 1A; VCE= 5V  
10  
8
40  
DC Current Gain  
Output Capacitance  
60  
15  
pF  
IE= 0; VCB= 10V; ftest=1.0MHz  
IC= 0.2A; VCE= 10V  
Current-Gain—Bandwidth Product  
MHz  
Switching times  
Turn-on Time  
0.5  
3.0  
0.3  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= 2A; IB1= 0.4A; IB2= -0.8A;  
RL= 200Ω; VCC= 400V  
Storage Time  
Fall Time  
‹ hFE-1 Classifications  
K
L
M
10-20  
15-30  
20-40  
2
isc Websitewww.iscsemi.cn  

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