2SC4596 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
2SC4596
型号: 2SC4596
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:233K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4596  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 0.3V(Max)@ IC= 3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 60V (Min)  
·Complement to Type 2SA1757  
APPLICATIONS  
·Designed for high speed and power switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
100  
V
V
V
A
A
60  
5
Collector Current-Continuous  
Collector Current-Peak  
5
10  
ICM  
Collector Power Dissipation  
@ TC=25℃  
25  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4596  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)CBO  
V(BR)EBO  
VCE(  
PARAMETER  
CONDITIONS  
IC= 3A ; IB= 0.3A, L= 1mH  
IC= 50μA; IE= 0  
MIN  
60  
TYP.  
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
100  
5
V
IE= 50μA; IC= 0  
V
IC= 3A; IB= 0.15A  
IC= 4A; IB= 0.2A  
0.3  
0.5  
1.2  
1.5  
10  
V
)-1  
sat  
V
VCE(  
)-2  
sat  
)-1  
sat  
)-2  
sat  
IC= 3A; IB= 0.15A  
IC= 4A; IB= 0.2A  
V
VBE(  
V
VBE(  
ICBO  
IEBO  
hFE  
fT  
VCB= 100V; IE= 0  
μA  
μA  
Emitter Cutoff Current  
VEB= 5V; IC= 0  
10  
DC Current Gain  
IC= 1A ; VCE= 2V  
100  
320  
Current-Gain—Bandwidth Product  
Output Capacitance  
IC= 0.5A ; VCE= 10V  
IE=0; VCB= 10V; ftest= 1.0MHz  
120  
80  
MHz  
pF  
COB  
Switching times  
Turn-on Time  
0.3  
1.5  
0.3  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= 3A ; IB1= -IB2= 0.15A  
RL= 10Ω;VCC30V  
Storage Time  
Fall Time  
‹ hFE classifications  
E
F
100-200  
160-320  
2
isc Websitewww.iscsemi.cn  

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