2SC4596 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管型号: | 2SC4596 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | isc Silicon NPN Power Transistor |
文件: | 总2页 (文件大小:233K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4596
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.3V(Max)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V (Min)
·Complement to Type 2SA1757
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
100
V
V
V
A
A
60
5
Collector Current-Continuous
Collector Current-Peak
5
10
ICM
Collector Power Dissipation
@ TC=25℃
25
PC
W
Collector Power Dissipation
@ Ta=25℃
2
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4596
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
IC= 3A ; IB= 0.3A, L= 1mH
IC= 50μA; IE= 0
MIN
60
TYP.
MAX
UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
100
5
V
IE= 50μA; IC= 0
V
IC= 3A; IB= 0.15A
IC= 4A; IB= 0.2A
0.3
0.5
1.2
1.5
10
V
)-1
sat
V
VCE(
)-2
sat
)-1
sat
)-2
sat
IC= 3A; IB= 0.15A
IC= 4A; IB= 0.2A
V
VBE(
V
VBE(
ICBO
IEBO
hFE
fT
VCB= 100V; IE= 0
μA
μA
Emitter Cutoff Current
VEB= 5V; IC= 0
10
DC Current Gain
IC= 1A ; VCE= 2V
100
320
Current-Gain—Bandwidth Product
Output Capacitance
IC= 0.5A ; VCE= 10V
IE=0; VCB= 10V; ftest= 1.0MHz
120
80
MHz
pF
COB
Switching times
Turn-on Time
0.3
1.5
0.3
μs
μs
μs
ton
tstg
tf
IC= 3A ; IB1= -IB2= 0.15A
RL= 10Ω;VCC≈ 30V
Storage Time
Fall Time
hFE classifications
E
F
100-200
160-320
2
isc Website:www.iscsemi.cn
相关型号:
2SC4596/DE
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596/DF
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7/D
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7/DF
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7/E
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7/EF
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SC4596C7/F
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明